“…These Sn signals can be ascribed to the triggered Sn 4+ ions to diffuse from the FTO substrate to the surface during a one-step annealing process (which is performed at one certain temperature for a definite time interval), not via a two-step annealing process (which is performed at two certain temperatures and each has its definite time interval), in agreement with previous studies. , A schematic representation of the suggested mechanism of Ti–Ni–O formed via one-step, and two-step thermal annealing is shown in Figure i. Further, for the high-resolution O 1s spectrum shown in Figure d, three prominent peaks can be distinguished at 530.1, 531.8, and 533.3 eV, distinctive of crystal lattice oxygen of metal oxides, carbonyl groups associated with ethylene glycol residues during anodization, and adsorbed H 2 O, respectively . The estimated atomic percentage of Ni and Sn atoms at 300 and 500 °C is listed in Table S2.…”