Terracing in HgCdTe LPE films grown from Te solution

Parker, Sidney G.; Weirauch, D. F.; Chandra, D.

doi:10.1016/0022-0248(90)90714-v

Cited by 22 publications

(9 citation statements)

References 10 publications

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“…(i) CrK=I 0 0 8, 1 2 7, 2 1 7, 2 0 8 and CuK=I 0 0 8 on {00 1} faces, (ii) CrK=I 202,215,206 and CuK=I 303 on { 1 0 1 } faces, (iii) CrK=I 2 2 0, 2 0 6, 2 2 6, 3 1 4 and CuK~I 2 2 0, 3 2 1 on { 1 1 0} faces.…”

Section: X-ray Topographymentioning

confidence: 99%

“…The incorporation process in crystals is general, and it has been studied in many different crystals [145,[209][210][211][212][213][214][215]. It is conditioned by the movement of the steps on the growing faces and it involves hillocks, macrosteps and terraces [162,[216][217][218][219][220][221][222][223][224][225].…”

Section: Inclusionsmentioning

confidence: 99%

“…The advancing step bunches and the macrosteps are stopped by impurities, strongly adsorbed at the active centres on the faces, move around them, form re-entrant corners and finally surround them. Due to a difference in supersaturation, especially between the top and the bottom part of the macrosteps at the re-entrant corners, inclusions of solution are trapped in the crystal following the overhang mechanism [162,210,213,215,217,220,221,223]. The grooves that are seen in Figs 52b, 53a and 54a-d are formed according to this general mechanism as is indicated by the presence of notched macrosteps.…”

Section: Inclusionsmentioning

confidence: 99%

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Extended structural defects in ?-Hgl2 single crystals

Nicolau

Dupuy

Rolland

1993

J Mater Sci: Mater Electron

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Extended structural defects in both ~-Hgl 2 crystals grown in solution or from the vapourphase were studied by optical microscopy, light scattering, SEM operated in cathodoluminescence and in secondary electron mode, X-ray topography, neutron, y-and X-ray rocking curves and oscillating crystal X-ray diffraction. The observed dislocations were compared with theoretically calculated dislocations. Dislocation loops, having diameters ranging from 2 gm to 500 gm, are observed on all low index faces, Hohlstellen (lens-shaped voids) having axes along the [001] direction, less than 1 gm in thickness, and diameters lying in the (001) planes, ranging from 2 gm to 10 gm are characteristic defects. Observed plastic deformations like glide sheets and bands, tilt and twist boundaries, kink and fatigue bands, ridges and rumplings were characterized. Growth rings, spherical void inclusions 10-30 gm in diameter, orthogonal walls of forest screw dislocations parallel to {1 00} planes, and streaks (planar void sheets crossing the (001 ) planes) were only observed in crystals grown from the vapour-phase. Cross-penetration twins having {1 1 4} twin planes are described. The possible formation of stacking faults was analysed. The mosaicity of solution-grown crystals ranges from 1' to 6'. A characteristic cellular structure, having a cell size ranging from 2 I~m to 10 gm, was observed in all the crystals examined and correlated to local deviations from the stoichiometric composition. Solid lens-shaped inclusions, having diameters ranging from 3 gm to 500 gm and thicknesses ranging from 0.3 gm to 50 gm, respectively, are entrapped in many crystals and correlated to spiral hillocks observed on {0 01 } growing faces.

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Section: X-ray Topographymentioning

confidence: 99%

Section: Inclusionsmentioning

confidence: 99%

Section: Inclusionsmentioning

confidence: 99%

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Extended structural defects in ?-Hgl2 single crystals

Nicolau

Dupuy

Rolland

1993

J Mater Sci: Mater Electron

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“…LPE techniques that make use of preliminary dissolution of a substrate are widely accepted in preparing epilayers [20]. Substrate dissolution before the epitaxial process is favorable for a layer growth.…”

Section: Introductionmentioning

confidence: 99%

Numerical modelling for convection in growth/dissolution of solid solution CdXHg1−XTe by liquid-phase epitaxy

Denisov¹,

Мажорова²,

Popov³

et al. 2004

Journal of Crystal Growth

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“…Besides the primary macroscopic defects (the particles themselves) secondary defects can also be caused, like misoriented areas emerging from the particles, terraces (HgCdTe) [1] or socalled depressions (GaAs) [2]. Bauser demonstrated for GaAs LPE that depressions in the liquid phase epitaxy (LPE) layer are developing locally at positions where the wetting of the substrate is impeded by particles at the solid-liquid interface.…”

Section: Introductionmentioning

confidence: 99%