TeSeF films by TeSe-SeF6/Ar reactive sputtering for ablative optical recording

Horie, Michikazu; Tamura, T.; Ohgaki, M.; Yoshida, Hidemi; Kisaka, Y.; Yoshimitsu, Kengo

doi:10.1063/1.356221

Journal of Applied Physics

1994

DOI: 10.1063/1.356221

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TeSeF films by TeSe-SeF6/Ar reactive sputtering for ablative optical recording

Michikazu Horie¹,

T. Tamura²,

M. Ohgaki³

et al.

Abstract: Articles you may be interested inInterface structure modified by plasmasurface interaction and its effect on ablative hole opening process in a bilayer system of TeSeF film and a fluorocarbon subbing layer

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Cited by 8 publications

(1 citation statement)

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“…19,20 A SeF 6 aAr plasma has been used to modify the surface of a TeSe alloy to produce ®lms for ablative write-once disks. 21 These technological applications of SF 6 and SeF 6 provide an additional motivation for investigations of the reactions of anions with SF 6 and SeF 6 , together with the closely related TeF 6 .…”

mentioning

confidence: 99%

Gas phase anion–molecule chemistry of SF6 , SeF6 and TeF6

Kennedy

Mayhew

2001

Phys. Chem. Chem. Phys.

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The rate coecients and anion product branching ratios for the thermal (300 K) reactions of O 2 À , O À , OH À , CF 3 À , and F À with SeF 6 and TeF 6 are reported. Non-dissociative and dissociative electron transfer pathways are identi®ed, together with F abstraction and association. F À does not react with SeF 6 ; all the other reactions proceed at or close to the capture rate. This is in contrast to SF 6 , for which the only observed reaction with the above anions is slow (k 3.0 Â 10 À11 cm 3 molecule À1 s À1 ) electron transfer with O 2 À to form SF 6 À. The results are shown to be consistent with the available thermochemistry. There is evidence for a substantial intrinsic barrier to F abstraction, for this pathway is only observed when it is highly exothermic. There is a remarkably fast association reaction between F À and TeF 6 , arising from the high ¯uoride anity of TeF 6 and facile expansion of the Te co-ordination sphere to accommodate seven ligands.

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mentioning

confidence: 99%

Gas phase anion–molecule chemistry of SF6 , SeF6 and TeF6

Kennedy

Mayhew

2001

Phys. Chem. Chem. Phys.

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The gas-phase thermochemistry of SeFn, SeFn+, and SeFn− (n=1–6) from Gaussian-3 calculations

Wang

2007

International Journal of Mass Spectrometry

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W O 3 ∕ metal thin-film bilayered structures as optical recording materials

Takeda

Kato

Fukano

et al. 2004

Journal of Applied Physics

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Interface reactions in WO 3 / metal thin-film bilayered structures were examined for applications to optical recording materials. Decreases in the reflectance of the structures caused by temperature elevation were observed and were attributed to (i) coloration of the WO 3 layers, and (ii) decreases in the reflectance of the metal layers resulting from redox reactions between the WO 3 and the metals. The reflectance spectra of the structures before temperature elevation showed moderate wavelength dependence over a wide range, from the visible to the near infrared. Decreases in the reflectance due to temperature elevation occurred over a wide wavelength range. Examination of the WO 3 / Al-Ti bilayered structures as potential optical disk memories revealed that the redox reactions occurred within submicrosecond time periods during irradiation with the recording laser.The results indicate that these structures possess promising properties for applications to optical recording materials that can be used over a wide wavelength range.

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TeSeF films by TeSe-SeF6/Ar reactive sputtering for ablative optical recording

Abstract: Articles you may be interested inInterface structure modified by plasmasurface interaction and its effect on ablative hole opening process in a bilayer system of TeSeF film and a fluorocarbon subbing layer

Cited by 8 publications

References 29 publications

Gas phase anion–molecule chemistry of SF6 , SeF6 and TeF6

Gas phase anion–molecule chemistry of SF6 , SeF6 and TeF6

The gas-phase thermochemistry of SeFn, SeFn+, and SeFn− (n=1–6) from Gaussian-3 calculations

W O 3 ∕ metal thin-film bilayered structures as optical recording materials

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