Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

Benoit, M.; Braccini, S.; Casse, G.; Chen, H.; Chen, K.; Bello, F. A. Di; Ferrère, D.; Golling, T.; González-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, D.; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristić, B.; Pinto, M. Vicente Barrero; Vossebeld, J. H.; Weber, M.; Weston, T. D.; Wu, W.; Li, Xu; Zaffaroni, E.

doi:10.1088/1748-0221/13/02/p02011

Cited by 58 publications

(29 citation statements)

References 14 publications

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“…Additional performance increases due to better tuning and higher substrate resistivity are expected in the future. Systematic measurements of irradiated ATLASPix1 prototypes with a variety of irradiation sources are currently ongoing to verify previous measurements of radiation hardness with small prototypes [5].…”

Section: Discussionmentioning

confidence: 87%

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Kiehn

Bello

Benoit

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 10 15 n eq /cm 2 and detection efficiencies above 99.5 %. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fillfactor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.

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Section: Discussionmentioning

confidence: 87%

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Kiehn

Bello

Benoit

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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“…During a beam test, the device showed a detection efficiency of 99.7% after a dose of 10 15 n eq /cm 2 . For 5 × 10 15 n eq /cm 2 , this value remains above 97% [129].…”

Section: Hv-maps/ccpdmentioning

confidence: 82%

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

Deveaux

2019

J. Inst.

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A: CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate sensing elements together with analogue and digital data processing circuits into one monolithic chip. This turns into 50 µm thin sensors, which provide an outstanding typical spatial resolution of few µm and a detection efficiency for minimum ionizing particles above 99.9%. The radiation tolerance of CPS was initially constrained by the limits of the CMOS processes used for their production but has been improved by orders of magnitudes during the last years.This work reviews the related R&D on the radiation tolerance of traditional CPS with partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. Procedures for assessing radiation damage in those non-standard pixels are discussed and the major mechanisms of radiation damage are introduced. Techniques for radiation hardening are shown. Moreover, recent results on next generation CPS featuring fully depleted sensors based on improved CMOS processes are summarized.

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“…The Schematic cross section of a HV-CMOS sensor: the deep n-well is the charge-collecting electrode and also contains additional CMOS circuits such as a preamplifier [9]. readout system was used for this test.…”

Section: Figurementioning

confidence: 99%

CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

Rimoldi

2017

J. Inst.

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A: The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detectors based on CMOS technology. Such detectors can provide charge collection, analog and digital amplification in the same silicon wafer. The radiation hardness is obtained with multiple nested wells that give the embedded CMOS electronics sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC. A number of alternative solutions have been explored and characterised. In this document, the results for chips produced by AMS are reported.

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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

Cited by 58 publications

References 14 publications

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

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