Recently, several transition metal chalcogenide materials
with
favorable optical and electrical properties suitable for sustainable
solar-based energy generation have been identified. In this work,
thin films of two promising ternary sulfides (bornite and chalcopyrite)
in the Cu–Fe–S system were successfully synthesized
as thin films from utilizing tris-N,N-diethyldithiocarbamate iron(III) and bis-N,N-diethyldithiocarbamate copper(II) molecular precursors
in aerosol-assisted chemical vapor deposition at 450 °C for 1
h. The deposited thin films were studied by powder X-ray diffraction,
and the resulting patterns were indexed to orthorhombic and tetragonal
copper iron sulfide (bornite, Cu5FeS4 and chalcopyrite,
CuFeS2). The morphology of the films at the microscale
was explored by scanning electron microscopy, revealing a polycrystalline
thin film with elemental ratios (i.e., Cu:Fe:S) of the two materials
corresponding to those expected for bornite (≈5:1:4) and chalcopyrite
(≈1:1:2), consistent with the X-ray structural characterization.
Characterization of the electrical transport properties of these high-quality
thin films by the four-point probe method was performed. The results
revealed resistivities of 1.8 × 10–4 Ω·m
for bornite and 1.6 × 10–2 Ω·m for
chalcopyrite, which are consistent with previously reported values
for the bulk materials. Estimation of the optical energy band gap
from Tauc plots of the ultraviolet-visible spectroscopy data was taken
for bornite and chalcopyrite giving direct band gap energies of 1.28
and 0.97/1.62 eV, respectively, demonstrating their potential utility
as either solar absorbing thin films or for photocatalysts for water
splitting.