Proceedings. Ninth IEEE European Test Symposium, 2004. ETS 2004.
DOI: 10.1109/etsym.2004.1347646
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Tests for address decoder delay faults in RAMs due to inter-gate opens

Abstract: This paper presents an electrical analysis of Address decoder Delay Faults 'AFDs' caused by resistive inter-gate opens in RAMs. It introduces a systematic method to explore the space of possible tests to detect these faults. The method is based on generating appropriate sensitizing address transitions and the corresponding sensitizing operation sequences.

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Cited by 3 publications
(1 citation statement)
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“…In [10], the authors try to provide the entire space of faults in the peripheral circuits of SRAM and the analysis of test conditions. In other works, SRAM address decoder delay faults [11], [12] and precharge delay faults [13] are presented by using defect injection. However, these delay fault models are all restricted to a certain part of the memory, and are all for SRAM circuits.…”
Section: Introductionmentioning
confidence: 99%
“…In [10], the authors try to provide the entire space of faults in the peripheral circuits of SRAM and the analysis of test conditions. In other works, SRAM address decoder delay faults [11], [12] and precharge delay faults [13] are presented by using defect injection. However, these delay fault models are all restricted to a certain part of the memory, and are all for SRAM circuits.…”
Section: Introductionmentioning
confidence: 99%