Abstract:SENIOR MEMBER, IEEE Ab .• tract-A set of published formulas for the frequency dependence of the microstrip effective relative dielectric constant
“…The model for the frequency dependency of the relative permittivity presented by Kirschning and Jansen [37] can be utilized for an iteration of the relative permittivity based on the effective relative permittivity of the microstrip line at each resonant frequency. According to Atwater [38], the model presented in [37] is in good agreement with the experimental dispersion measurements.…”
Ring resonator structures are widely used to characterize the frequency and temperature dependence of the relative permittivity and loss tangent of printed wiring board materials. Several theoretical models for the ring resonator structures have been presented since the first ring resonator application. In this paper, the theoretical models of the ring resonator structure are adapted for calculating the relative permittivity of low-loss and high-loss printed wiring board materials at frequency range from 250 MHz to 10.0 GHz. In addition, a review of the characterization of the loss tangent using the ring resonator is presented. The review also provides information about differences of the results due to different approximation used for conductor losses of the microstrip line. The research presented in this paper is based on an experimental research with several different microstrip and strip line ring resonator structures. The results of this study provide useful information about applying the ring resonator method for measuring the relative permittivity and loss tangent of dielectric substrates.
“…The model for the frequency dependency of the relative permittivity presented by Kirschning and Jansen [37] can be utilized for an iteration of the relative permittivity based on the effective relative permittivity of the microstrip line at each resonant frequency. According to Atwater [38], the model presented in [37] is in good agreement with the experimental dispersion measurements.…”
Ring resonator structures are widely used to characterize the frequency and temperature dependence of the relative permittivity and loss tangent of printed wiring board materials. Several theoretical models for the ring resonator structures have been presented since the first ring resonator application. In this paper, the theoretical models of the ring resonator structure are adapted for calculating the relative permittivity of low-loss and high-loss printed wiring board materials at frequency range from 250 MHz to 10.0 GHz. In addition, a review of the characterization of the loss tangent using the ring resonator is presented. The review also provides information about differences of the results due to different approximation used for conductor losses of the microstrip line. The research presented in this paper is based on an experimental research with several different microstrip and strip line ring resonator structures. The results of this study provide useful information about applying the ring resonator method for measuring the relative permittivity and loss tangent of dielectric substrates.
“…The effective microstrip permittivity ε eff (f) clearly increases with frequency and the wave is progressively slowed down [3]. The relationship between frequency dependent effective microstrip permittivity and phase velocity is given by:…”
Section: Dispersion Formulas For Microstrip Linementioning
This paper we mainly emphasize on simulation & synthesis of microstrip line by using powerful simulation tools like sonnet and matlab. Many researchers have investigated the dispersion characteristics of microstrip lines at different higher frequency range. This paper we analyzed the microstrip line with characteristic impedance 50Ω at frequency range 1 to 20GHz for Alumina, Gallium Arsenide and Silicon substrate materials. All parameters of the microstrip lines are exactly determined from the empirical formula of microstrip line. Here we compare the results of the dispersion formulas on the software tools.
“…This biasing network provides sufficient gain low noise figure and stable operation. Several experimentations are carried for the wideband LNA biasing circuits in the earlier published work [17][18][19][20].…”
Section: Uwb Lna Design Simulation and Analysismentioning
<span lang="EN-US">The paper aims at designing of two stage cascaded ultra-wideband (UWB) low noise amplifier (LNA) by using negative image amplifier technique. The objective of this article is to show the performance improvement using negative image amplifier technique and realization of negative valued lumped elements into microstrip line geometry. The innovative technique to realize the negative lumped elements are carried out by using Richard’s Transformation and transmission line calculation. The AWR microwave office tool is used to obtain characteristics of UWB LNA design with hybrid microwave integrated circuit (HMIC) technology. The 2-stage cascaded LNA design using negative image amplifier technique achieves average gain of 23dB gain and low noise figure of less than 2dB with return loss less than -8dB for UWB 3-10GHz. The Proper bias circuit is extracted using DC characteristics of transistor at biasing point 2V, 20mA and discussed in detail with LNA layout. The negative image matching technique is applied for both input and output matching network. This work will be useful for all low power UWB wireless receiver applications.</span>
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