Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Wadley, P.; Novák, V.; Campion, R. P.; Rinaldi, Christian; Martí, X.; Reichlová, Helena; Železný, Jakub; Gàzquez, Jaume; Roldán, Manuel A.; Varela, M.; Khalyavin, D. D.; Langridge, S.; Kriegner, Dominik; Máca, F.; Mašek, J.; Bertacco, Riccardo; Holý, V.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Foxon, C.T.; Wunderlich, J.; Jungwirth, T.

doi:10.1038/ncomms3322

Cited by 145 publications

(142 citation statements)

References 36 publications

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“…The Néel temperature is found to be between 1,300 K and 1,600 K, which should be compared with 1,145 K in MnIr and below 500 K in recently discovered CuMnAs (ref. 4). Large magnetoresistance anisotropy requires large SO coupling effects, which, in a uniaxial structure, may lead to the existence of a large magnetocrystalline anisotropy.…”

Section: Discussionmentioning

confidence: 99%

“…AFM materials being largely insensitive to the effect of an external magnetic field, the parasitic fields that may affect Giant Magnetoresistance (GMR) or Tunnel Magnetoresistance (TMR) nanodevices would not affect TAMR devices. This has stimulated the search for AFM alloys combining high Néel temperature (T N ) and large SO coupling effects 4,5 . Low-temperature (T) magnetoresistive effects in excess of 100% have been obtained in TAMR stacks incorporating AFM MnIr 6 .…”

mentioning

confidence: 99%

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Revealing the properties of Mn2Au for antiferromagnetic spintronics

Barthem¹,

Colin²,

Mayaffre³

et al. 2013

Nat Commun

188

155

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The continuous reduction in size of spintronic devices requires the development of structures, which are insensitive to parasitic external magnetic fields, while preserving the magnetoresistive signals of existing systems based on giant or tunnel magnetoresistance. This could be obtained in tunnel anisotropic magnetoresistance structures incorporating an antiferromagnetic, instead of a ferromagnetic, material. To turn this promising concept into real devices, new magnetic materials with large spin-orbit effects must be identified. Here we demonstrate that Mn 2 Au is not a Pauli paramagnet as hitherto believed but an antiferromagnet with Mn moments of B4 m B . The particularly large strength of the exchange interactions leads to an extrapolated Néel temperature well above 1,000 K, so that ground-state magnetic properties are essentially preserved up to room temperature and above. Combined with the existence of a significant in-plane anisotropy, this makes Mn 2 Au the most promising material for antiferromagnetic spintronics identified so far.

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Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

Revealing the properties of Mn2Au for antiferromagnetic spintronics

Barthem¹,

Colin²,

Mayaffre³

et al. 2013

Nat Commun

188

155

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show abstract

“…Promising recent studies described additional examples of this type of alternative room-temperature antiferromagnetic material with potential for large tunnel anisotropic magnetoresistance. These included metallic Mn 2 Au alloys (Wu et al, 2012;Barthem et al, 2013) and semimetallic CuMnAs (Wadley et al, 2013); see also Sec. III.D.2.…”

Section: A Anisotropic Magnetoresistancementioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

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“…Antiferromagnets do not produce stray fields, are robust to external perturbations from magnetic fields, and show ultrafast spin dynamics and current-induced phenomena [1][2][3][4][5][6]. Among many different antiferromagnetic [7][8][9] or artificial antiferromagnetic materials [10,11], the noncollinear chiral antiferromagnets have attracted much interest, due to their remarkable structural, magnetic, and electrotransport properties. The trianglular spin structure of these compounds gives rise to a large anomalous Hall effect (AHE) [12,13], thermoelectric effect [14][15][16], magneto-optical Kerr effect [17,18], and spin Hall effect (SHE) [19].…”

Section: Introductionmentioning

confidence: 99%

Noncollinear antiferromagnetic Mn3Sn films

Μάρκου

Taylor

Kalache

et al. 2018

Phys. Rev. Materials

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Noncollinear hexagonal antiferromagnets with almost zero net magnetization were recently shown to demonstrate giant anomalous Hall effect. Here, we present the structural and magnetic properties of noncollinear antiferromagnetic Mn 3 Sn thin films heteroepitaxially grown on Y:ZrO 2 (111) substrates with a Ru underlayer. The Mn 3 Sn films were crystallized in the hexagonal D0 19 structure with c-axis preferred (0001) crystal orientation. The Mn 3 Sn films are discontinuous, forming large islands of approximately 400 nm in width, but are chemical homogeneous and characterized by near perfect heteroepitaxy. Furthermore, the thin films show weak ferromagnetism with an in-plane uncompensated magnetization of M = 34 kA/m and coercivity of μ 0 H c = 4.0 mT at room temperature. Additionally, the exchange bias effect was studied in Mn 3 Sn/Py bilayers. Exchange bias fields up to μ 0 H EB = 12.6 mT can be achieved at 5 K. These results show Mn 3 Sn films to be an attractive material for applications in antiferromagnetic spintronics.

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Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Cited by 145 publications

References 36 publications

Revealing the properties of Mn2Au for antiferromagnetic spintronics

Revealing the properties of Mn2Au for antiferromagnetic spintronics

Antiferromagnetic spintronics

Noncollinear antiferromagnetic Mn3Sn films

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