“…Further analysis of the Ge motifs is accomplished by computing the Te‐Ge‐Te bond angle distribution (BAD) for each RMC simulation run (four per annealing state). To reveal minor shifts in the BADs of different annealing states each BAD can be fitted to a Boltzmann probability distribution based on effective bond angle potentials
[
66,67 ] :
where the Boltzmann constant is denoted by k B and T is the temperature fixed at 300 K. θ i is the effective potential minimum and
the corresponding rigidity parameter, which gives a measure for the tolerance of a bond angle to deviate from the potential minimum. Thus, a large rigidity suggests that the tolerance is small and most motifs in the systems possess angles close to the mean value θ i .…”