As
the development of n-type ternary chalcopyrite semiconductors
in thermoelectrics (TEs) is relatively slow compared to that of their
p-type counterparts, it greatly restricts the fabrication of their
modules and real applications. In this work, we prepare n-type AgInSe2-based composites via mixing with their electrical property-counter
Ag2Se, where each species plays a role in improving the
TE performance. The results confirm that the presence of the minor
Ag2Se enhances the Hall carrier concentration (n
H) significantly and thereby improves the electrical
property of the system. At the same time, it reduces the lattice thermal
conductivity (κL) at low temperatures as the phonon
scattering in the AgInSe2/Ag2Se heterointerface
increases. On another note, the internal lattice distortion (ψ)
in the main phase AgInSe2 strengthens as the content of
Ag2Se increases, which reduces the κL significantly
at high temperatures. As a consequence, the resultant ZT value reaches
∼0.9 at 846 K, about 2.7 times that of the pristine AgInSe2.