“…Consequently, efforts have been devoted over the last 15 years to the optimization of TE properties of both n-type and p-type oxide materials. Good candidates for n-type materials include Nb-, W-, La-, Ce-, Pr-, Nd-, Sm-, Gd-, Dy-, and Ydoped SrTiO 3 [1][2][3][4][5][6][7][8][9][10][11][12][13], Nb-, La-, Nd-, Sm-, and Gd-doped Sr 2 TiO 4 , and Sr 3 Ti 2 O 7 [14], La-doped CaMnO 3 [15] or Al-, Ge-, Ni-and Co-doped ZnO [16][17][18][19][20], Ce-doped In 2 O 3 [21], Er-doped CdO [22,23], TiO 2 [24], Nb 2 O 5 [24], WO 3 [24], while for p-type materials the most promising compounds are Ca 3 Co 4 O 9 [25] with ZT ∼ 0.3 at 1000 K [26], and BiCuSeO with ZT ∼ 1.4 at 923 K. [27] Many studies have concerned doped SrTiO 3 , demonstrating the largest ZT ∼ 0.4 in SrTi 0.8 Nb 0.2 O 3 films at 1000 K [2], and ZT ∼ 0.41 in bulk Sr 1−3x/2 La x TiO 3 at 973 K. [12] Different strategies have been proposed to further increase TE efficiency. Attempts to decrease the lattice thermal conductivity κ l by atomic substitution of Sr by Ba have been envisaged but seem to negatively affect the TE performance.…”