Texture and Se vacancy optimization induces high thermoelectric performance in Bi2Se3 flexible thin films

Ao, Dong-Wei; Liu, Wei-Di; Chen, Yue-Xing; Ma, Fan; Gu, Yi-Jie; Zheng, Zhuang-Hao

doi:10.1007/s12598-024-02643-7

Rare Met.

2024

DOI: 10.1007/s12598-024-02643-7

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Texture and Se vacancy optimization induces high thermoelectric performance in Bi2Se3 flexible thin films

Dong-Wei Ao,

Wei-Di Liu,

Yue-Xing Chen

et al.

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2024

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Cited by 3 publications

References 51 publications

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Bi[Se‐(2‐Me₂NC₆H₄)]₃: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

P. D.,

Bisht,

Majumder

et al. 2024

Eur J Inorg Chem

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Chemical vapor deposition using molecular compounds is a salient method to achieve high‐quality, uniform films comprising two‐dimensional flakes. In this communication, we present the synthesis and characterization of analytically pure single crystals of Bi[Se‐(2‐Me2NC6H4)]3, used as a single source precursor to grow thin films of bismuth selenide. The structural and morphological studies of the films were performed using powder X‐ray diffraction, Raman spectroscopy, scanning, and transmission electron microscopy, revealing a pure phase stoichiometry with two‐dimensional flakes of quintuple layers grown on glass, Si, and sapphire substrates. The deposited films on the glass surface show a near‐ideal Bi to Se stoichiometry of 1.84 and exhibit an ambient temperature resistivity of 30 mΩ.cm. When unevenly illuminated with a laser of 532 nm wavelength, it shows a photo‐thermoelectric (PTE) voltage generation with a response time of 2 seconds and an estimated Seebeck coefficient value of ‐128 ± 6.6 μV/K, thus demonstrating its suitability for device applications in IoTs.

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Bi[Se‐(2‐Me₂NC₆H₄)]₃: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

P. D.,

Bisht,

Majumder

et al. 2024

Eur J Inorg Chem

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Switchable p–n–p conduction and thermoelectric properties of selenium-doped tellurium crystal

Abbey,

Jang,

Frimpong

et al. 2024

Rare Met.

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Achieving High Thermoelectric Performance in Bi₂(Te, Se)₃ Thin Film with (00l)-Oriented by Incorporating Tellurization and Selenization Processes

Zheng,

Chen,

Zhang

et al. 2024

ACS Appl. Mater. Interfaces

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Flexible thermoelectric (TE) generators have received great attention as a sustainable and reliable option to convert heat from the human body and other ambient sources into electricity. This study provides a synthesis route that involves thermally induced diffusion to introduce Te and Se into Bi, fabricating an n-type Bi−Te−Se flexible thin film on a flexible substrate. This specific synthesis alters the crystal orientation (00l) of the thin film, improving in-plane electrical transportation and optimizing carrier concentration. Consequently, Bi x Te y Se 0.42 enhanced both the Seebeck coefficient and electrical conductivity, achieving a power factor of 17.1 μW cm −1 K −2 at room temperature. The TE device assembled with p-type Sb 2 Te 3 exhibited exceptional flexibility with only a 26.2% change in resistance after 1000 times of bending at a radius of about 6 mm. The resistance change was further reduced to 7.5% after the application of a vinyl laurate coating. The fabricated TE device generated an ultrahigh output power of 792 nW with a temperature difference of 30 K.

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Texture and Se vacancy optimization induces high thermoelectric performance in Bi2Se3 flexible thin films

Cited by 3 publications

References 51 publications

Bi[Se‐(2‐Me₂NC₆H₄)]₃: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

Bi[Se‐(2‐Me₂NC₆H₄)]₃: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

Switchable p–n–p conduction and thermoelectric properties of selenium-doped tellurium crystal

Achieving High Thermoelectric Performance in Bi₂(Te, Se)₃ Thin Film with (00l)-Oriented by Incorporating Tellurization and Selenization Processes

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Texture and Se vacancy optimization induces high thermoelectric performance in Bi2Se3 flexible thin films

Cited by 3 publications

References 51 publications

Bi[Se‐(2‐Me2NC6H4)]3: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

Bi[Se‐(2‐Me2NC6H4)]3: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

Switchable p–n–p conduction and thermoelectric properties of selenium-doped tellurium crystal

Achieving High Thermoelectric Performance in Bi2(Te, Se)3 Thin Film with (00l)-Oriented by Incorporating Tellurization and Selenization Processes

Contact Info

Product

Resources

About

Bi[Se‐(2‐Me₂NC₆H₄)]₃: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

Bi[Se‐(2‐Me₂NC₆H₄)]₃: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

Achieving High Thermoelectric Performance in Bi₂(Te, Se)₃ Thin Film with (00l)-Oriented by Incorporating Tellurization and Selenization Processes