Sm 0,20 Ce 0,80 O 2 powder was used for the formation of samarium doped cerium oxide (SDC) thin films using e-beam physical vapour deposition. Surface area of powder was 34.9 m 2 /g and particle size -0.3 μm -0.5 μm. Thin films were deposited using physical vapor deposition system on SiO 2 (optical quartz) and Alloy 600 substrates. The deposition rate 0.2 nm/s ÷ 1.6 nm/s and substrate temperature 20 °C ÷ 600 °C were used. Ionic conductivity investigation revealed that the maximum ionic conductivity (1.67 S/m) has the thin film deposited on 300 °C temperature substrate using 0.4 nm/s deposition rate. Minimum ionic conductivity (0.26 S/m) has thin film, which was deposited on 20 °C temperature substrate using 0.8 nm/s deposition rate. Vacancy activation energies vary in 0.87 eV ÷ 0.97 eV range. Furthermore the calculations of crystallite size revealed that crystallite size increases with increasing substrate temperature: from 7.50 nm to 46.23 nm on SiO 2 substrate and from 9.30 nm to 44.62 nm on Alloy 600 substrate. Molar concentration of samarium in initial evaporated material is 19.38 mol % and varies from 11.37 mol % to 21 mol % in formed thin films depending on technological parameters.