Texture Effects in IrMn/CoFe Exchange Bias Systems

Aley, N. P.; Vallejo-Fernández, G.; Kroeger, R.; Lafferty, B.; Agnew, J.; Lu, Yujie; O'Grady, K.

doi:10.1109/tmag.2008.2001317

Cited by 69 publications

(48 citation statements)

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“…From previous studies on the NiCr/IrMn system, the grain size in the films will be approximately 5 nm and the anisotropy of the AF layer will be of the order of 10 7 erg/cc. 9 The coercivity of unpatterned films of CoFe grown in our system but without an AF layer lies in the range of 50 Oe-100 Oe. …”

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confidence: 81%

Domain wall pinning for racetrack memory using exchange bias

Polenciuc

Vick

Allwood

et al. 2014

Applied Physics Letters

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The pinning of domain walls in ferromagnetic (F) wires is one possible technique for the creation of a solid state magnetic memory. Such a system has been under consideration for some time but one of the main limitations is the control of, and non-uniformity of the domain wall pinning. Techniques such as the lithographic definition of notches and steps in the substrate have had some success in creating local pins but have the disadvantage of being expensive to fabricate and the reproducibility of the domain wall pinning strength is limited. In this letter, we report on an alternative strategy to create pins of reproducible strength using crossed ferromagnetic and antiferromagnetic (AF) wires such that exchange bias can be introduced at the crossing points. Such a system has the advantage of ease of fabrication and creating domain wall pins of controlled strength by varying the width of the AF wire. We have achieved domain wall pinning field strengths of up to 37 Oe in a system where the AF wire is deposited above the F wire which is comparable to the values achieved using notches.

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confidence: 81%

Domain wall pinning for racetrack memory using exchange bias

Polenciuc

Vick

Allwood

et al. 2014

Applied Physics Letters

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“…A 10nm layer of IrMn on a Ta/Ru seed layer was used to ensure that the AF grains were thermally stable at temperatures below 300K 9) . In terms of the York Model this temperature is denoted TNA where the subscript implies 'no activation'.…”

Section: Sample Preparationmentioning

confidence: 99%

Coercivity and Interfacial Spin Clusters in Exchange Bias Systems

et al. 2014

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In this paper the current state of knowledge of the magnetic structure interfaces in exchange biased systems are briefly reviewed. A conceptual model explaining the interface in terms of spin clusters that behave in a similar manner to fine particles displaying superparamagnetism is described. To test this concept IrMn/CoFe based exchange biased polycrystalline samples of median grain diameter 7.1, 7.2 and 7.8nm were sputtered and the temperature dependence of the coupling measured. Small changes in the AF grain diameter are reflected by large volume changes in the spin clusters and consequently the temperature dependence. In particular the variation of the coercivity with temperature affects the stability of the magnetization of the spin clusters.

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“…Numerous factors, including the IrMn (1 1 1) texture, the AFM layer ordered and disordered phases, post-annealing scheme, and the seed layer effect [6][7][8][9], can influence FM/AFM magnetic properties. Researchers attributed the larger exchange-biasing field (H ex ) to a stronger IrMn (1 1 1) texture, where the seed layer deposition-candidate is crucial [10][11][12]. There is a strong relationship between H ex performance and IrMn layer characteristics, including (1 1 1) texture, anisotropy constant (K AF ), grain size distribution, and AFM grain thermal-stability [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…Researchers attributed the larger exchange-biasing field (H ex ) to a stronger IrMn (1 1 1) texture, where the seed layer deposition-candidate is crucial [10][11][12]. There is a strong relationship between H ex performance and IrMn layer characteristics, including (1 1 1) texture, anisotropy constant (K AF ), grain size distribution, and AFM grain thermal-stability [10][11][12][13][14]. The seed layer is probably the dominant factor affecting microstructural orientation, reduction in current shunting for grain magnetoresistance (GMR), and the tunneling magnetoresistance (TMR) effect [13,14].…”

Section: Introductionmentioning

confidence: 99%