Texture-related roughness of (Nb,Ti)N sputter-deposited films

Iosad, N. N.; Pers, N. M. van der; Grachev, Sergey; Zuiddam, M.; Jackson, B. D.; Дмитриев, П. Н.; Klapwijk, T. M.

doi:10.1109/tasc.2003.812296

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…Literature [18,21,22] also indicated that for the sput tered superconductor material initial compressive stresses at room temperature may be present up to 2 GPa.…”

Section: A Model Setupmentioning

confidence: 99%

Thermo-mechanical effects in majorana type quantum devices

Gielen

Mackenzie

2015

2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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We have developed a multi-scale model, conslstmg of an atomistic model in LAMMPS of an InSb nano wire, and a continuum model in COMSOL of a so called Majorana research device, to study the effects of thermo-mechanical deformations during the cool down from room temperature to the operating temperature of about 50 mK. For the simulation of the InSb nano-wire suitable potentials were implemented in LAMMPS. The simulation results of the nano-wire show size dependent Young's moduli and gradients in the radial lattice spacing during uniaxial straining. The materials properties that were derived from the atomistic model, were introduced in the continuum model. Cool down of the device from room temperature to it's operating temperature introduced significant deformation. However, the stresses in the sys tem are moderate and no fracture or damage is expected. Still, deformation of the device will induce shifts in band gap behavior of the device. Band gap shifts using a simple approximation are estimated to be about 34%.978-1-4799-9950-7/15/$31.00

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“…Literature [18,21,22] also indicated that for the sput tered superconductor material initial compressive stresses at room temperature may be present up to 2 GPa.…”

Section: A Model Setupmentioning

confidence: 99%

Thermo-mechanical effects in majorana type quantum devices

Gielen

Mackenzie

2015

2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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“…[48][49][50][51][52] The potential energy of an adatom depends on the crystallographic orientation it is placed onto. Correspondingly, the barrier for diffusion increases or decreases.…”

Section: F62mentioning

confidence: 99%

“…Just as in the case of electrochemical activities, these differences can only be explained on the grounds of differences in incident atom energies. [48][49][50][51][52] The potential energy of an adatom depends on the crystallographic orientation it is placed onto. Correspondingly, the barrier for diffusion increases or decreases.…”

Section: F62mentioning

confidence: 99%

Sputtered Ir Films Evaluated for Electrochemical Performance I. Experimental Results

Wessling

Mokwa

Schnakenberg

2008

J. Electrochem. Soc.

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The present work deals with the microstructure and electrochemical characteristics of sputtered metallic iridium thin films. The thin films are characterized regarding their electrochemical performance in cyclic voltammetry. Distinct morphologies and microstructures of Ir thin films are generated by altering the process parameters of power, pressure, and target-to-substrate distance. Growth of films with high specific surface and high electroactivity can be fostered by process conditions that deliver a low surface mobility of the deposited atoms. The anodically delivered charge can be varied by factors of more than 30, merely determined by film morphology. Electrochemical characteristics of the thin films are strongly tied to crystallographic orientation. The development of preferred ͕111͖ orientation over adatom kinetic energy inversely correlates with the development of electrochemical activity. Enhanced shadowing effects during growth can be used to further increase the specific surface available for charge transfer. This is illustrated by changes in film thickness. Using a process supplying low-mobility Ir atoms to the surface, the thickest evaluated Ir film, at almost 3000 nm, delivers an anodic charge of 157 mC/cm 2 after 100-fold potential cycling.Interest in iridium ͑Ir͒ and iridium oxide ͑IrOx͒ has been growing due to their remarkable chemical, electrochemical, and physical properties. Ir͑Ox͒ has been evaluated for applications in a wide range of fields, including pH sensing, electrochromic devices, optical information storage, chlorine or oxygen evolution, neural stimulation, field emission cathodes, and advanced memory technology. For the latter, IrOx as one of the few naturally highly conducting oxides that can be used as electrode or diffusion barrier material for nonvolatile memory devices based on ferroelectric materials such as Pb͑Zr, Ti͒O 3 lead zirconate titanate. 1-8 IrOx has recently attracted interest as an emitter or protective coating material in field emission cathode arrays, used in vacuum microelectronic devices, or as displays. 9-11 Most applications of IrOx are based on its electrochemical properties. One of the earliest investigated fields was electrochromism. 12-16 Different electrochromic coloring mechanisms have been proposed based on hydroxide and proton movement to the redox centers. 15,17,18 Regarding the use in potentiometric pH-sensing applications, IrOx thin-film electrodes exhibit a fast and strong change in open-circuit potential upon pH alterations. Furthermore, the material is stable over a wide pH range, even under high temperatures and in aggressive environments. [19][20][21][22][23] Stability is one of the main reasons for its application as a durable electrode for chlorine or oxygen evolution. 24-27 A further important field is the use of Ir͑Ox͒ as a coating for electrodes in functional electrical stimulation. [28][29][30][31][32][33][34][35][36][37] The electrodes are used to electrically excite nerve cells. The application draws on biocompatibility, high electrochem...

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“…On the other side, it is widely known that in reactive sputter deposited films the nature and properties of the films depend on the process parameters such as the system geometry, sputtering rate, target-to-substrate distance, substrate temperature and the pressures of the sputtering and reactive gas [12][13][14][15][16][17][18]. The incorporation of the reactive species to the film is believed to take place through different mechanisms depending on the effective reactive gas pressure: (i) for low reactive gas pressure, incorporation occurs mainly by chemisorption of the reactive species onto the target, the forming film and the chamber walls; this way, reactive gas becomes trapped and its partial pressure reduces; (ii) near the pressure critical value, the chemisorption onto the target exceeds the sputtering rate and thereafter abrupt changes in the sputtering regime are observed, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…Additionally, as in glow discharge processes, negative and/or reflected ions are usually produced [19]. The composition, microstructure and morphology of the deposited layers would also depend on the process variables such as the target-substrate geometry, substrate temperature and reactive gas pressure [16][17][18][19][20]. In this work, the CdTe oxide films were prepared at low substrate temperature and variable N 2 O partial pressures to study the influence of these parameters on the morphology, composition and microstructure.…”

Section: Introductionmentioning

confidence: 99%