Textured (111) crystalline silicon thin film growth on flexible glass by e-beam evaporation

McMahon, Shane; Chaudhari, Ashok; Zhao, Zhizhong; Efstathiadis, Harry

doi:10.1016/j.matlet.2015.06.031

Cited by 5 publications

(5 citation statements)

References 22 publications

(26 reference statements)

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“…Soda-lime glass is a kind of amorphous non-crystalline material that is made of quartz sand (SiO 2 ), soda ash (Na 2 CO 3 ), and limestone (CaCO 3 ). It is the largest producer of industrial glass components [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

High-Quality Cutting of Soda–Lime Glass with Bessel Beam Picosecond Laser: Optimization of Processing Point Spacing, Incident Power, and Burst Mode

Liu,

Yang,

Chen

et al. 2024

Applied Sciences

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Soda–lime glass has a wide range of applications in the fields of smart electronics, optical components, and precision originals. In order to investigate the effect of processing parameters on picosecond Bessel laser cutting of soda–lime glass and to achieve high-quality soda–lime glass cutting, a series of cutting experiments were conducted in this study. In this study, it was found that the machining point spacing, the incident laser energy, and the number of burst modes had a significant effect on the machining of the samples. The atomic force microscope (AFM) showed a better quality of roughness of the machined cross-section when the spacing of the machining points was 1 μm, a locally optimal solution was obtained when the number of burst modes was 2, and a locally optimal solution was also obtained when the incident laser power was 11.5 W. In this study, better machining quality was achieved for soda–lime glass of 1 mm thickness, with an average roughness of 158 nm and a local optimum of 141 nm.

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Section: Introductionmentioning

confidence: 99%

High-Quality Cutting of Soda–Lime Glass with Bessel Beam Picosecond Laser: Optimization of Processing Point Spacing, Incident Power, and Burst Mode

Liu,

Yang,

Chen

et al. 2024

Applied Sciences

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“… 9 McMahon et al demonstrated the growth of a (111) oriented crystalline silicon thin film at 725 °C on a glass substrate. 10 Maity et al. studied the Al-induced crystallization of amorphous (a)-Si by thermal annealing and rapid heavy ion irradiation.…”

Section: Introductionmentioning

confidence: 99%

“…This is due to the suppression of the nucleation during the growth by increasing the thickness of Al 2 O 3 membrane . McMahon et al demonstrated the growth of a (111) oriented crystalline silicon thin film at 725 °C on a glass substrate . Maity et al.…”

Section: Introductionmentioning

confidence: 99%

“…9 McMahon et al demonstrated the growth of a (111) oriented crystalline silicon thin film at 725 °C on a glass substrate. 10 metal-induced crystallization at 200 °C with the aid of 100 MeV Ni 7+ ion irradiance. 11 Neimash et al investigated the application of laser radiation to provide the tin-induced crystallization in amorphous silicon.…”

Section: ■ Introductionmentioning

confidence: 99%

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Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation

et al. 2020

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Metal-induced crystallization of amorphous silicon is a promising technique for developing high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal growth of polycrystalline silicon via aluminum-induced crystallization at different annealing times and temperatures. In this research, thin films of aluminum/silicon (Al/Si) and aluminum/silicon/tin (Al/Si/Sn) layers were fabricated using the thermal evaporation technique with a designed wire tungsten boat. MIC of a:Si was detected at annealing temperature of 500 °C using X-ray diffraction, Raman spectroscopy, and field emission scanning electron microscopy. The crystallinity of the films is enhanced by increasing the annealing time. In the three-layer thin films, MIC occurs because of the existence of both Al and Sn metals forming highly oriented (111) silicon. Nanocrystalline silicon with dimensions ranged from 5 to 300 nm is produced depending on the structure and time duration. Low surface reflection and the variation of the optical energy gap were detected using UV–vis spectroscopy. Higher conductivities of Al/Si/Sn films than Al/Si films were observed because of the presence of both metals. Highly rectifying ideal diode manufactured from Al/Si/Sn on the FTO layer annealed for 24 h indicates that this device has a great opportunity for the optoelectronic device applications.

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“…Currently, for manufacturing biochips it is common to use glass, relative chemical inertness and the possibility of functionalization of which make it a convenient material to allow the molecule consolidation on its surface . Immobilization of biomolecules on the glass surface is possible after chemical modification, including the generation of free silanol groups, and treatment with organic compounds to form reactive functional groups on the surface …”

Section: Introductionmentioning

confidence: 99%

Organoelement Coatings on Glass as Precursors for Biochip Technologies

Naumkin

Rodlovskaya

Васнев

et al. 2017

Macromolecular Symposia

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Textured (111) crystalline silicon thin film growth on flexible glass by e-beam evaporation

Cited by 5 publications

References 22 publications

High-Quality Cutting of Soda–Lime Glass with Bessel Beam Picosecond Laser: Optimization of Processing Point Spacing, Incident Power, and Burst Mode

High-Quality Cutting of Soda–Lime Glass with Bessel Beam Picosecond Laser: Optimization of Processing Point Spacing, Incident Power, and Burst Mode

Fabrication of Nanocrystalline Silicon Thin Films Utilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation

Organoelement Coatings on Glass as Precursors for Biochip Technologies

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