Texturization of Diamond Wire Sawn Mc-silicon by Acid Vapor Etching Followed by Acid Solution Post-treatment

Kinetic studies on acidic wet chemical etching of silicon in binary and ternary mixtures of HF, HNO3 and H2SiF6

“…Even for the ternary etching mixtures of HF, HNO 3 and H 2 SiF 6 used in the PV industry for acid texturing, there is no sufficient systematic background in the literature data to be able to provide any reliable conclusions about kinetic models. Rather, numerous literature references [20][21][22][23][26][27][28][29][30][31][32][33][34]36,41 can be summarised as an empirical search for the optimum etching bath composition and the optimum reaction conditions to generate specific surface morphologies, without paying particular attention to the etching mechanism.…”

“…24,25 Accordingly, the literature is predominantly focused on the generation of defined surface morphologies (e.g., polish or texture etching) using empirically selected compositions of etching mixtures. [20][21][22][23][26][27][28][29][30][31][32][33][34]36,41 A decisive parameter is the mass transport through a stagnant liquid film (diffusion boundary layer), 5,24 represented on the one hand by the mass transfer of the reactants from the solution to the silicon surface, followed by the effective chemical reactions at the Si surface, and on the other hand by the transport of the products from the silicon surface into the solution. Depending on which step offers the higher resistance, the overall reaction is reaction or mass transfer controlled.…”

“…, polish or texture etching) using empirically selected compositions of etching mixtures. 20–23,26–34,36,41…”