TFT‐based, multi‐stage, active pixel sensor for alpha particle detection

Abstract

A multi-stage thin film transistor (TFT)-based active pixel sensor (APS), capable of successfully detecting small impulses of charge resulting from incident alpha particle strikes, is presented. Detection of alpha particles is important in the field of neutron detection, where fully integrated thin-film-based detectors are an attractive alternative to conventional 3 He-based proportional counters owing to their low-cost and large-area scaling capability, combined with the use of readily available materials. A typical TFT process, however, produces only N-type devices with low electron mobilitiesmaking high-gain CMOS amplifier designs unfeasible. The disadvantages of using a TFT-only APS design are mitigated by cascading multiple low-gain TFT amplifiers, which results in a higher overall pixel gainsubsequently allowing for the successful detection and readout of alpha particle strikes. Presented is a new APS fabricated in an indium gallium zinc oxide TFT process is presented, and successful initial alpha response measurements are reported.

Thin film cadmium telluride charged particle sensors for large area neutron detectors

“…Newly reported TFT-based active pixel sensor amplifiers have demonstrated the capability of reliably reading out single alpha strikes-consistent with those observed from the thermal neutron capture reaction in 10 B. 3 There are previous reports in the literature of thin film charged particle and neutron detectors fabricated from polycrystalline diamond with a thickness of 14.5-25 lm. 4 Amorphous Si detectors with thicknesses of 20-30 lm have also been utilized as charged particle and indirect neutron detectors.…”

Metal oxide semiconductor thin-film transistors for flexible electronics

“…319 Chung et al realized an alpha particle detecting circuit by AC coupling 4 different stages of amplification with 14 active IGZO TFTs. 308 The circuit by Chung et al yields a linear DC gain of 14.9-20 V/V and a band-pass characteristic. 308 In a similar fashion, simulations of different band-pass topologies have been shown by Bahubalindruni et al with DC gains of up to 75 dB and cut-off frequencies in the order of 25 MHz.…”

“…308 The circuit by Chung et al yields a linear DC gain of 14.9-20 V/V and a band-pass characteristic. 308 In a similar fashion, simulations of different band-pass topologies have been shown by Bahubalindruni et al with DC gains of up to 75 dB and cut-off frequencies in the order of 25 MHz. 305 The flexible metal oxide semiconductor-based analog circuit with the largest TFT count is an operational amplifier with 16 IGZO TFTs.…”

Thin‐Film Devices for Active Pixel Sensor Schemes Enabling High Density and Large‐Area Sensors

“…[ 7 ] Recently, indium gallium zinc oxide (IGZO) TFTs coupled with a‐Si:H sensors have been tested in the APS scheme as pixelated particle detectors. [ 8,9 ] This has generated a lot of interest in new integration methods for thin‐film detection systems. [ 8,10 ] However, electrical stability and incompatibility with processes requiring high thermal budgets [ 11,12 ] compromise the use of IGZO‐based TFTs for other detection systems.…”

“…[ 8,9 ] This has generated a lot of interest in new integration methods for thin‐film detection systems. [ 8,10 ] However, electrical stability and incompatibility with processes requiring high thermal budgets [ 11,12 ] compromise the use of IGZO‐based TFTs for other detection systems.…”