Thallium Bromide Nuclear Radiation Detector Development

Churilov, A.; Ciampi, Guido; Kim, Hadong; Cirignano, L.; Higgins, William E.; Olschner, F.; Shah, K.S.

doi:10.1109/tns.2009.2021424

Cited by 65 publications

(39 citation statements)

References 25 publications

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“…The advancement of the material growth and purification techniques in recent years has significantly increased the product to ϳ10 −3 cm 2 / V for electrons and ϳ10 −4 cm 2 / V for holes. [6][7][8][9][10] These results are comparable to those for CdZnTe ͑CZT͒, which is the current state-of-the-art room-temperature semiconductor radiation detector material. 1 It is worth noting that when one moves from III-V to II-VI and I-VII compound semiconductors, the carrier mobility tends to decrease significantly.…”

Section: Introductionsupporting

confidence: 59%

“…2 TlBr has been investigated for radiation detection for several decades. [3][4][5] Some very encouraging results have been obtained, [6][7][8][9][10][11][12] showing that TlBr is a promising material for room-temperature spectroscopic gamma-ray detection. TlBr has high atomic numbers ͑Tl: 81 and Br: 35͒ and high density ͑7.56 g / cm 3 ͒, which lead to efficient radiation absorption.…”

Section: Introductionmentioning

confidence: 99%

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Enhanced Born charge and proximity to ferroelectricity in thallium halides

Du¹,

Singh²

2010

Phys. Rev. B

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Electronic-structure and lattice-dynamics calculations on thallium halides show that the Born effective charges in these compounds are more than twice larger than the nominal ionic charges. This is a result of cross-band-gap hybridization between Tl p and halogen-p states. The large Born charges cause giant splitting between longitudinal and transverse-optic phonon modes, bringing the lattice close to ferroelectric instability. Our calculations indeed show that cubic TlBr develops ferroelectric instabilities upon lattice expansion starting at 2%. It is remarkable that the apparently ionic thallium halides with a simple cubic CsCl structure and large differences in electronegativity between cations and anions can be very close to ferroelectricity. This can lead to effective screening of defects and impurities that would otherwise be strong carrier traps and may therefore contribute to the relatively good carrier transport properties in TlBr radiation detectors.

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Section: Introductionsupporting

confidence: 59%

Section: Introductionmentioning

confidence: 99%

Enhanced Born charge and proximity to ferroelectricity in thallium halides

Du¹,

Singh²

2010

Phys. Rev. B

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“…7,8 TlBr, a soft-lattice halide, exhibits excellent transport properties and is being developed as a room-temperature gamma-ray detector material. 9 The electron mobility-lifetime product of TlBr is as high as 6 10 -3 cm 2 /V. 10 The estimated electron lifetime is about 70-100 μs.…”

Section: Introductionmentioning

confidence: 99%

Shallow halogen vacancies in halide optoelectronic materials

2014

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“…7, 10, and 34͒ are generally smaller than that of TlBr. [35][36][37][38][39] This points to the need for further defect studies in these materials in order to better understand the transport properties and the performance of these materials as radiation detectors. The products of these materials may improve substantially in the future through better defect and impurity management.…”

Section: Discussionmentioning

confidence: 99%

Enhanced Born charges in III-VII,IV-VII2, andV-VII3compounds

Singh

2010

Phys. Rev. B

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We report electronic-structure and lattice dynamics calculations on selected III-VII, IV-VII 2 , and V-VII 3 compounds. The common characteristic of these largely ionic compounds is that their outmost cation-s states are fully occupied and thus the conduction-band states are derived from the more spatially extended cation-p states, resulting in significant cross-band-gap hybridization, which enhances Born effective charges substantially. The large Born charges cause large splitting between longitudinal and transverse optic phonon modes and large static dielectric constants resulting mostly from the lattice contribution. This can lead to effective screening of defects and impurities that would otherwise be strong carrier traps and recombination centers and may therefore have positive effects on the carrier transport properties in radiation detectors based on these soft-lattice halides.

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Thallium Bromide Nuclear Radiation Detector Development

Cited by 65 publications

References 25 publications

Enhanced Born charge and proximity to ferroelectricity in thallium halides

Enhanced Born charge and proximity to ferroelectricity in thallium halides

Shallow halogen vacancies in halide optoelectronic materials

Enhanced Born charges in III-VII,IV-VII2, andV-VII3compounds

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