The (111) oriented growth of C60 films on GaAs(100) substrates

Yao, Jianghong; Zou, Yunjuan; Zhang, Xingwang; Chen, Guanghua

doi:10.1016/s0040-6090(97)00113-2

Cited by 23 publications

(11 citation statements)

References 14 publications

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“…As the size of fullerenes increases, the distances of the covalent bonds increase and it becomes increasingly difficult for the fullerenes to fit in the T-site, suggesting that the bonding in general becomes weaker in the adsorption structures from C 28 to C 60 . Indeed, the calculated adsorption energy decreases monotonically, except for C 32 , as the size of fullerenes increases, as shown in Figure 15-20. The unusually small adsorption energy for C 32 is attributed to the exceptional stability of the molecule in the gas phase.…”

Section: Bonding Analysesmentioning

confidence: 82%

“…Thus one would expect that the adsorption energy decreases as the average binding energy increases. However, the binding energy of C 32 can not explain the unusually small adsorption energy. This is due to the fact that partial electron transfer from the substrate to C 32 is needed in order to form stable covalent bonds between C 32 and the surface.…”

Section: Bonding Analysesmentioning

confidence: 94%

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Recent Advances in Fullerene Deposition on Semiconductor Surfaces

Zhou

Ning

et al. 2007

Challenges and Advances in Computational Chemistry and Physics

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Abstract:Development of novel chemistry on semiconductor surfaces is an area of increasing research interests due to its technological importance. The possibility of depositing fullerenes on semiconductor surfaces via the formation of stable chemical bonds provides an opportunity to design and develop novel materials that meet the increasing stringent technology challenge. In this chapter, we review recent advances in the theoretical modeling of fullerene chemisorption on GaAs and Si surfaces. We show that strong covalent chemical bonds can be formed upon deposition of fullerenes of various sizes on these surfaces, forming well-ordered thin films. The chemical/physical properties of such thin films can be tailored by using different sizes of fullerenes

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Section: Bonding Analysesmentioning

confidence: 82%

Section: Bonding Analysesmentioning

confidence: 94%

Recent Advances in Fullerene Deposition on Semiconductor Surfaces

Zhou

Ning

et al. 2007

Challenges and Advances in Computational Chemistry and Physics

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“…The idea of creating a new generation of electronic devices based on the semiconductor properties of fullerene C 60 molecules stimulated systematic studies of C 60 solid phases [1][2][3][4][5][6]. The technology of electronic devices demands for high-quality deposited films, which can be achieved by optimizing conditions for the deposition techniques and sophisticating the methods of the film characterization [3][4][5][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…The technology of electronic devices demands for high-quality deposited films, which can be achieved by optimizing conditions for the deposition techniques and sophisticating the methods of the film characterization [3][4][5][7][8][9]. New and unexpected phenomena can be anticipated, which are associated with finite size, limited dimensionality, and substrate-C 60 interactions [5,10]. The preparation of C 60 films on semiconductor substrates was reported recently by several research groups [4,5,7,11,12].…”

Section: Introductionmentioning

confidence: 99%

“…New and unexpected phenomena can be anticipated, which are associated with finite size, limited dimensionality, and substrate-C 60 interactions [5,10]. The preparation of C 60 films on semiconductor substrates was reported recently by several research groups [4,5,7,11,12]. Si and GaAs were used as a semiconductor substrate for growing fullerene films, multidomain [7] or small-grain crystalline islands [11] can be obtained.…”

Section: Introductionmentioning

confidence: 99%

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Optical characterization of fullerene films on flat and patterned semiconductor substrates

Dmitruk

Dmitruk²,

Basiuk

et al. 2004

Carbon

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Highly Selective Synthesis of C₆₀ Disks on Graphite Substrate by a Vapor–Solid Process

et al. 2008

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Fullerene (C 60 ) is a potential component for organic transistors, [1] superconductors, [2] and optical switching devices. [3] Because these applications are based on the use of sets of specific electronic energy levels that would be determined by the mode of the geometrical assemblies of C 60 , the development of synthetic methods for well-defined one-dimensional (1D) and 2D single crystals of C 60 has been considered a key prerequisite. Various 1D structures of C 60 have been investigated because of practical advantages in device fabrication as well as the inherent interest in new architectures that might show unprecedented properties. Wirelike 1D structures have been synthesized directly on a solid substrate by a solventevaporation process and by spontaneous growth at the interface of immiscible solvents. Several types of 1D C 60 nanostructures grown by these methods include nanowhiskers, [4] nanorods, [5] and nanotubes, [6] of which only nanorods have been reported to be single crystalline. In contrast, there are few reports of 2D structures of single-crystalline C 60 . More importantly, the above-mentioned solution-based synthetic processes always include solvent molecules in the final structures. Solvent-free 1D or 2D C 60 nanostructures can be synthesized by vapor-driven processes. Recently, 2D hexagonal-shaped C 60 disks synthesized by a vapor-evaporation method were reported by Bao et al., but they were formed unselectively along with randomly grown 3D crystals.[1a]Herein we report a successful application of vapor-solid (VS) process for the highly selective synthesis of disk-shaped 2D single-crystalline C 60 . We describe: 1) the substrate effect on the highly selective formation of C 60 disks, 2) the structural characterization of the disks, 3) photoluminescence (PL) properties of the disks, and 4) the photoconductivity of a single disk.The C 60 disks were synthesized by a VS process. [7] Sublimed C 60 powder (Aldrich, 99.9 %) was placed in the middle of a quartz tube in a horizontal tube furnace, and a highly oriented pyrolytic graphite (HOPG) substrate supported on Si wafer was located near the end zone of the furnace (see Figure S1 in Supporting Information). The shape of the C 60 crystals proved to depend on the temperature of the tube furnace, the flow rate of the Ar carrier gas, the type of solid substrate, and the position of the substrate in the tube. Under optimum conditions (650 8C, 100 sccm of Ar (sccm = standard cubic centimeter per minute)), C 60 disks were formed on HOPG (Figure 1 a) with more than 50 % surface coverage. Disks of several different shapes were observed, and two representative disks are shown in Figure 1 b; one is a symmetric hexagonal-shaped disk and the other is an asymmetric one. It is noted that the area adjacent to the disks in Figure 1 a was covered with a thin film. At a high Ar flow rate (1000 sccm) and a fixed reaction temperature, no disks were found; instead thin films predominantly formed (Figure 1 c). It should be noted that the formation of disks is criti...

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The (111) oriented growth of C60 films on GaAs(100) substrates

Cited by 23 publications

References 14 publications

Recent Advances in Fullerene Deposition on Semiconductor Surfaces

Recent Advances in Fullerene Deposition on Semiconductor Surfaces

Optical characterization of fullerene films on flat and patterned semiconductor substrates

Highly Selective Synthesis of C₆₀ Disks on Graphite Substrate by a Vapor–Solid Process

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The (111) oriented growth of C60 films on GaAs(100) substrates

Cited by 23 publications

References 14 publications

Recent Advances in Fullerene Deposition on Semiconductor Surfaces

Recent Advances in Fullerene Deposition on Semiconductor Surfaces

Optical characterization of fullerene films on flat and patterned semiconductor substrates

Highly Selective Synthesis of C60 Disks on Graphite Substrate by a Vapor–Solid Process

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Highly Selective Synthesis of C₆₀ Disks on Graphite Substrate by a Vapor–Solid Process