The 3.4 GHz BAW RF Filter Based on Single Crystal AlN Resonator for 5G Application

Ding, Rui; Xuan, Weipeng; Dong, Shurong; Zhang, Biao; Gao, Feng; Liu, Gang; Zhang, Zichao; Jin, Hao; Luo, Jikui

doi:10.3390/nano12173082

Cited by 18 publications

(8 citation statements)

References 15 publications

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“…Ding et al [119] fabricated an AlN-based BAW resonator and filtered it onto a SiC substrate using a GaN HEMT-compatible process. The AlN film was grown using metal-organic chemical vapor deposition.…”

Section: B Telecommunication Applicationsmentioning

confidence: 99%

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A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

et al. 2023

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Piezoelectric materials have attracted considerable attention over the last two decades because many technologies utilize their core properties of piezoelectric materials. Previous applications consisted of bulk structures; however, a shift towards better performance and a more simplified and compatible fabrication method are required. Aluminum nitride (AlN) is a material that fits these criteria; it has a non-centrosymmetric crystal structure with a polarized c-axis and exhibits piezoelectric properties. Furthermore, it has an added benefit as the fabrication process of AIN is compatible with complementary metal-oxide semiconductor technology. This has led to a rapid increase in the adoption and interest in AlNbased devices. In this review, the crystal structure of AlN and its piezoelectric properties are compared with those of aluminum scandium nitride. Subsequently, functional devices such as consumer-based devices, telecommunication-based devices, industrial-related applications, and medical applications are presented. Finally, a summary and discussion of the future AlN research are presented.

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Section: B Telecommunication Applicationsmentioning

confidence: 99%

“…FIGURE 9. Illustration of various MEMS used in telecommunication devices: (a) prospective view and cross-sectional view of the AlN Lamb wave resonator[121], (b) model structure of the AlN BAW resonator[119], (c) cross-section view of the resonator with AlN anchored at the center[118], and (d) conventional AlN Lamb wave resonator[122].…”

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confidence: 99%

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

et al. 2023

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“…Increasing the substrate’s effective electro-mechanical coupling coefficient ( k t 2 ) is an effective method to boost the filter bandwidth [ 8 ]. Most BAW filters use aluminum nitride (AlN) Scandium (Sc) doped AlN and LiNbO 3 as the piezoelectric films, but they have a k t 2 of 6%, 9%, and 11%, respectively [ 9 ]. Thus, they are not good enough for fabricating BAW filters with sufficient bandwidth.…”

Section: Introductionmentioning

confidence: 99%

Flexible Film Bulk Acoustic Wave Filter Based on Poly(vinylidene fluoride-trifluorethylene)

He,

Lu,

Gao

et al. 2024

Polymers

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Poly(vinylidene fluoride-trifluorethylene) (P(VDF-TrFE)) has promising potential applications in radio-frequency filters due to their excellent piezoelectric properties, flexibility, and stability. In this paper, a flexible film bulk acoustic wave filter is investigated based on P(VDF-TrFE) as piezoelectric film. A new method based on three-step annealing is developed to efficiently remove the porosity inside the P(VDF-TrFE) films so as to improve its properties. The obtained film achieved high β-phase content beyond 80% and a high piezoelectric coefficient of 27.75 pm/V. Based on the low porosity β-phase films, a flexible wide-band RF filter is designed, which consists of a bulk acoustic wave resonator and lumped inductor-capacitor elements as a hybrid configuration. The resonator sets the filter’s center frequency, while the lumped LC-based matching network extends the bandwidth and enhances out-of-band rejection. The testing results of the proposed wide-band filter show its good performance, with 12.5% fractional bandwidth and an insertion loss of 3.1 dB. To verify the possibility of folding and stacking the flexible bulk acoustic wave devices for high-density multi-filter integration in MIMO communication, bending tests of the filter are also conducted with the bending strain range up to 5500 με. The testing results show no noticeable performance degradation after four bending cycles. This work demonstrates the potential of β-phase P(VDF-TrFE) bulk acoustic wave filters to expand the scope of future flexible radio-frequency filter applications.

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“…Ding R et al produced an FBAR-based filter with a center frequency of 3.38 GHz with 160 MHz 3 dB bandwidth. The insertion loss of the filter has a minimum of 1.5 dB [28]. Yang Q designed a high-selectivity FBAR filter for the 3.4-3.6 GHz range with interpolation loss of −2.05 dB [29].…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter

Zhou,

Zheng,

et al. 2024

Micromachines

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With the development of wireless communication, increasing signal processing presents higher requirements for radio frequency (RF) systems. Piezoelectric acoustic filters, as important elements of an RF front-end, have been widely used in 5G-generation systems. In this work, we propose a Sc0.2Al0.8N-based film bulk acoustic wave resonator (FBAR) for use in the design of radio frequency filters for the 5G mid-band spectrum with a passband from 3.4 to 3.6 GHz. With the excellent piezoelectric properties of Sc0.2Al0.8N, FBAR shows a large Keff2 of 13.1%, which can meet the requirement of passband width. Based on the resonant characteristics of Sc0.2Al0.8N FBAR devices, we demonstrate and fabricate different ladder-type FBAR filters with second, third and fourth orders. The test results show that the out-of-band rejection improves and the insertion loss decreases slightly as the filter order increases, although the frequency of the passband is lower than the predicted ones due to fabrication deviation. The passband from 3.27 to 3.47 GHz is achieved with a 200 MHz bandwidth and insertion loss lower than 2 dB. This work provides a potential approach using ScAlN-based FBAR technology to meet the band-pass filter requirements of 5G mid-band frequencies.

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The 3.4 GHz BAW RF Filter Based on Single Crystal AlN Resonator for 5G Application

Cited by 18 publications

References 15 publications

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices

Flexible Film Bulk Acoustic Wave Filter Based on Poly(vinylidene fluoride-trifluorethylene)

Design and Fabrication of 3.5 GHz Band-Pass Film Bulk Acoustic Resonator Filter

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