Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's
DOI: 10.1109/ispsd.1997.601489
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The 600 V rating n-ch trench IGBT with the low leakage current and the high channel mobility using the [010] oriented trench sidewall

Han‐Soo Kim
1
,
Tae-Sun Lee
2
,
Hyun-Chul Kim
3
et al.

Abstract: The trench IGBT with high cell packing density

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