The adaptation of an electron microscope for reflexion and some observations on image formation

Haine, M.E.; Hirst, W. P.

doi:10.1088/0508-3443/4/8/303

Cited by 37 publications

(7 citation statements)

References 4 publications

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“…With metals and plastics, however, this cannot be achieved. ' Examination of contacting surfaces, by techniques such as multiple-beam interferometry, (6] and electron microscopy [ 3 ] , shows that, however carefully the surfaces are prepared, they always have a certain degree of roughness which is large on the atomic scale. When two such surfaces are placed in contact, they only touch at the tips of their asperities.…”

Section: Resultsmentioning

confidence: 99%

Use of the Scanning Electron Microscope in a Study of the Abrasive Properties of Textile Yarns

Egerton

Fisher

1970

Textile Research Journal

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The wear on latch knitting needles caused by the passage of yarn through a modified knitting assembly has been studied. The abraded needles were viewed in a scanning electron microscope. The wear produced on the surface of the needles by continuous filament polyester yarn was found to be in the form of smooth, regular and sometimes continuous grooves.The surface of a number of unused needles has been studied in some detail.

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Section: Resultsmentioning

confidence: 99%

Use of the Scanning Electron Microscope in a Study of the Abrasive Properties of Textile Yarns

Egerton

Fisher

1970

Textile Research Journal

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“…The RI signal is the number of SEs per second measured by the ET detector as the flux of SEs from the Pt RI-SE converter (see (2) in Figure 1). The total number of reflected ions is proportional to the number of primary ions, N I , and the proportionality constant is the reflection coefficient, η(Θ 1 ,Θ 2 ,φ 2 ).…”

Section: Contrast Formation In Scanning Reflection Ion Microscopymentioning

confidence: 99%

“…This technique is similar to reflection electron microscopy (REM) proposed by Ruska in 1933 [1] who realized REM using an angle of 90° between the incident and reflected beams. Later, in the 1950s, a REM technique employing lower incidence angles [2][3][4] was developed to increase the sensitivity to vertical surface irregularities. A vertical resolution of tens of nanome-ters was obtained and it was shown that the negative effect of chromatic aberration was also reduced at low incidence angles, yet was still more pronounced in REM as compared to TEM [2,4].…”

Section: Introductionmentioning

confidence: 99%

“…Later, in the 1950s, a REM technique employing lower incidence angles [2][3][4] was developed to increase the sensitivity to vertical surface irregularities. A vertical resolution of tens of nanome-ters was obtained and it was shown that the negative effect of chromatic aberration was also reduced at low incidence angles, yet was still more pronounced in REM as compared to TEM [2,4]. The further development of REM in ultrahigh vacuum conditions allowed imaging of the single atomic steps [5][6][7][8] and monitoring of atomic layer-by-layer crystal growth by means of reflection high energy electron diffraction (RHEED) [9].…”

Section: Introductionmentioning

confidence: 99%

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Scanning reflection ion microscopy in a helium ion microscope

Petrov¹,

Vyvenko²

2016

Nano Online

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Reflection ion microscopy (RIM) is a technique that uses a low angle of incidence and scattered ions to form an image of the specimen surface. This paper reports on the development of the instrumentation and the analysis of the capabilities and limitations of the scanning RIM in a helium ion microscope (HIM). The reflected ions were detected by their "conversion" to secondary electrons on a platinum surface. An angle of incidence in the range 5-10° was used in the experimental setup. It was shown that the RIM image contrast was determined mostly by surface morphology but not by the atomic composition. A simple geometrical analysis of the reflection process was performed together with a Monte Carlo simulation of the angular dependence of the reflected ion yield. An interpretation of the RIM image formation and a quantification of the height of the surface steps were performed. The minimum detectable step height was found to be approximately 5 nm. RIM imaging of an insulator surface without the need for charge compensation was successfully demonstrated.

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“…A resolution of about 350 A. is claimed. Haine and Hirst(106) using illuminating and viewing angles which total 6" to 10" attain a resolution of about 430 A.…”

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confidence: 99%

Electron Microscopy

Swerdlow¹,

Dalton²,

Birks³

1956

Anal. Chem.

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sity of London, on Xov. 10 and 11, 1953. As with previoue conferences of the British group, papers were read concerning the electron microscope and a wide range of its applications. Twenty-three papers were given reporting on electron optics, chemical applications, reflection microscopy, carbon, silica, and plastic replica techniques, thin sectioning, and particulate structures in biological materials. The proceedings were summarized by Challice (38). This same group held its 1955 conference on July 5 to 7 at the University of Glasgow. Forty-one papers were read: 16 on instrumentation and general techniques, four on crystals, plastics, and air pollution studies, and six on metallurgical applications.

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The adaptation of an electron microscope for reflexion and some observations on image formation

Cited by 37 publications

References 4 publications

Use of the Scanning Electron Microscope in a Study of the Abrasive Properties of Textile Yarns

Use of the Scanning Electron Microscope in a Study of the Abrasive Properties of Textile Yarns

Scanning reflection ion microscopy in a helium ion microscope

Electron Microscopy

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