The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy

Sasse, A.G.B.M.; Lakerveld, D.G.; Silfhout, A. van

doi:10.1016/0039-6028(88)90340-8

Cited by 14 publications

(3 citation statements)

References 19 publications

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“…More fine structure can be resolved additional to the well established Auger transitions at 91.8 and 81 eV [12]. The low energy tail of the experimentally obtained spectrum is slightly overestimated due to the data processing, which is worse in this energy region.…”

Section: Partial Ldos (Pldos)mentioning

confidence: 91%

“…Earlier studies [2][3][4][5][6][7][8][9][10][11][12] showed that analysis of the lineshape of the Core Valence Valence (CVV) Auger spectrum can provide information of the local chemical environment of the target atomic species. However, the CVV Auger intensity, A(E), becomes distorted by all kind of losses such as elastic and inelastic scattering, interaction with collective oscillations (plasmons, etc.)…”

Section: Introductionmentioning

confidence: 99%

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The influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the SiL2,3 VV Auger lineshape

Sasse

Hoef

Wormeester

et al. 1989

Solid State Communications

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The extreme surface sensitiveness of the Si-L2.3VV Auger process and its ability to probe the atomic electron distribution in the direct neighbourhood of the L2.3-core-hold makes this electron spectroscopic technique a candidate for investigations of the local changes in the electron distribution due to surface reconstruction. In this paper we show, explicitly, the influence of the (2 x 1) reconstruction of the Si(l 00) surface on the Si-L2.3W Auger lineshape. Furthermore, the calculated Auger lineshape will be compared with an experimentally obtained line profile.

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Section: Partial Ldos (Pldos)mentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

The influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the SiL2,3 VV Auger lineshape

Sasse

Hoef

Wormeester

et al. 1989

Solid State Communications

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show abstract

“…Similarly, photoemission experiments [5][6][7] have indicated that NO is completely dissociated, even at low temperatures. In contrast, a molecularly adsorbed species was observed by means of photodesorption experiments [8] and an Auger electron spectroscopy (AES) study [9] at room temperature. Theoretical studies of NO adsorption on surfaces have also afforded both dissociative [10,11] and molecular [12] adsorption.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study of NO Adsorption and Decomposition on Si(100) Surfaces

Imamura

Tokiwa

2006

e-J. Surf. Sci. Nanotechnol.

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Using hybrid density functional theory (DFT), we analyzed NO adsorption on a clean Si(100) surface and on Si(100) surfaces modified by an oxygen atom or molecule. The estimated vibrational frequencies for the N-O stretching mode of chemisorbed NO molecules on both the clean and the modified surfaces were 1500-1550 cm −1 for the N-end-down configuration and 1610 cm −1 for the O-end-down configuration. NO dissociated easily from the clean surface via a NO dimer with a Si-NO-NO configuration, and the activation energy for the dissociation was small.

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New approach for correction of distortions in spectral line profiles in Auger electron spectroscopy

Sasse

Wormeester

Silfhout

1988

Surface & Interface Analysis

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A new deconvolution method for Auger electron spectroscopy is presented. This method is based on a non-linear least squares minimizing routine (Levenberg-Marquardt) and global approximation using splines, solving many of the drawbacks inherent to the Van Cittert and Fourier transform based deconvolution methods. The deconvolution routine can be run on a personal computer. The application of this method goes beyond the electron spectroscopies and can be considered as a general deconvolution method.

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The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy

Cited by 14 publications

References 19 publications

The influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the SiL2,3 VV Auger lineshape

The influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the SiL2,3 VV Auger lineshape

Theoretical Study of NO Adsorption and Decomposition on Si(100) Surfaces

New approach for correction of distortions in spectral line profiles in Auger electron spectroscopy

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