The Advantages of AlGaN-Based UV-LEDs Inserted With a p-AlGaN Layer Between the EBL and Active Region

Zhang, Jun; Tian, Wenjing; Wu, Feng; Yan, Weiyi; Xiong, Hui; Dai, Jiangnan; Fang, Yanyan; Wu, Zhihao; Chen, Chang

doi:10.1109/jphot.2013.2278520

Cited by 35 publications

(17 citation statements)

References 42 publications

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“…The band-offset ratio is assumed to be 0.7/0.3 for AlGaN materials [57] and the device operating temperature is assumed to be 300 K [58]. Most of the parameters in this paper are the same as those in [59]. The other material parameters of the devices used in the simulations can be found in [60].…”

Section: Model and Parametersmentioning

confidence: 99%

Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier

et al. 2015

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In order to improve the performance of AlGaN-based deep ultraviolet lightemitting diodes (UV LEDs), the optical and physical properties of AlGaN-based deep UV LEDs with a p-type and thickened last quantum barrier (LQB) are studied numerically. The output power-current performance curves, internal quantum efficiency, electroluminescence intensity, energy band diagrams, distributions of carrier concentrations, and the radiative recombination rates in the active region are investigated by Advance Physical Model of Semiconductor Devices (APSYS) software. The results reveal that, compared with the conventional one, the AlGaN-based deep UV LED with a p-type and thickened LQB achieves a remarkable improvement in performance, which is mainly attributed to the enhancement of hole injection and electron confinement.

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Section: Model and Parametersmentioning

confidence: 99%

Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier

et al. 2015

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“…3 Currently, however, DUV LEDs are still seriously limited because of high aluminum components lead to a low external quantum efficiency (EQE). 4,5 According to reports, the EQE of 280-nm DUV LEDs is only 10%. 6 This is due to mechanisms such as high dislocation density leading to high non-radiative recombination, 7,8 large polarization charges generated in the interfaces between different materials leading to a low carriers confined ability.…”

Section: Introductionmentioning

confidence: 99%

Study of Deep Ultraviolet Light-Emitting Diodes with a p-AlInN/AlGaN Superlattice Electron-Blocking Layer

Huang

Guo

et al. 2017

Journal of Elec Materi

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The AlGaN-based deep ultraviolet light-emitting diodes with a p-type Al 0.92 In 0.08 N/Al 0.55 Ga 0.45 N superlattice electron-blocking layer are studied numerically. The energy band diagrams, radiative recombination rate, electron leakage current, light output power and internal quantum efficiency are investigated. The simulation results show the structure has a low electron leakage current and high hole injection efficiency compared to the original deep ultraviolet light-emitting diodes, which is ascribed to the deep ultraviolet light-emitting diodes with a p-type Al 0.92 In 0.08 N/Al 0.55 Ga 0.45 N superlattice electron-blocking layer having a low polarization effect on the interface between the last quantum barrier and the electron-blocking layer. As a result, the radiative recombination rate and the light output power are significantly enhanced.

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“…Hirayama et al reported that the efficiency of UV-LEDs could be improved significantly by using a multi-quantum-barrier electron-blocking layer (EBL) [17], [18]. Zhang et al demonstrated the suppression of electron leakage by inserting a p-AlGaN layer between the EBL and active region [19]. The advantages of compositional graded EBL have been investigated by Yang Li et al [20].…”

Section: Introductionmentioning

confidence: 99%

The Advantages of AlGaN-Based Ultraviolet Light-Emitting Diodes With Al Content Graded AlGaN Barriers

Yue

Zhang

et al. 2015

J. Display Technol.

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A novel five-period AlGaN/AlGaN multiple quantum wells light-emitting diodes (LEDs) structure with Al content graded AlGaN barriers is designed in order to improve the electrical and optical performance of ultraviolet LEDs (UV-LEDs), and the effects are analyzed by using the APSYS simulation programs. The results show that the effective potential height for electrons is increased, and simultaneously the effective potential height for holes is decreased with the increased number of graded AlGaN barriers, which contributes to less electron leakage and better hole injection efficiency. Thus, the internal quantum efficiency and light output power are significantly improved, and the efficiency droop is also mitigated effectively as the number of graded AlGaN barriers increases. However, there is an undesired peak emission in the last barrier when it is replaced by the graded AlGaN barrier.

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The Advantages of AlGaN-Based UV-LEDs Inserted With a p-AlGaN Layer Between the EBL and Active Region

Cited by 35 publications

References 42 publications

Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier

Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier

Study of Deep Ultraviolet Light-Emitting Diodes with a p-AlInN/AlGaN Superlattice Electron-Blocking Layer

The Advantages of AlGaN-Based Ultraviolet Light-Emitting Diodes With Al Content Graded AlGaN Barriers

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