The Ag-Ge (silver-germanium) system

Olesinski, R. W.; Abbaschian, G. J.

doi:10.1007/bf02877462

Cited by 36 publications

(19 citation statements)

References 25 publications

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“…The resultant surface roughness of Ge translates to a rougher Ag thin film. (2) Based on the Ag−Ge phase diagram from studies by Olesinski et al, 53 at ambient room temperature during our deposition, Ge has ∼2% solubility into Ag to form the Ag−Ge FCC alloy at the Ge−Ag interface, which can explain why the 2 nm Ge layer cannot be clearly observed on the XTEM image of Figure 1(d). This Ag−Ge alloy would provide a gradual transition from Ge to Ag, resulting in a smooth Ag thin film.…”

Section: ■ Results and Discussionmentioning

confidence: 96%

Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited with a Germanium Nucleation Layer

et al. 2015

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The structural properties of optically thin (15 nm) silver (Ag) films deposited on SiO2/Si(100) substrates with a germanium (Ge) nucleation layer were studied. The morphological and crystallographical characteristics of Ag thin films with different Ge nucleation layer thicknesses were assessed by cross-sectional transmission electron microscopy (XTEM), reflection high-energy electron diffraction (RHEED), X-ray diffractometry (XRD), grazing incidence X-ray diffractometry (GIXRD), X-ray reflection (XRR), and Fourier transform infrared spectroscopy (FTIR). The surface roughness of Ag thin films was found to decrease significantly by inserting a Ge nucleation layer with a thickness in the range of 1 to 2 nm (i.e., smoothing mode). However, as the Ge nucleation layer thickness increased beyond 2 nm, the surface roughness increased concomitantly (i.e., roughing mode). For the smoothing mode, the role of the Ge nucleation layer in the Ag film deposition is discussed by invoking the surface energy of Ge, the bond dissociation energy of Ag-Ge, and the deposition mechanisms of Ag thin films on a given characteristic Ge nucleation layer. Additionally, Ge island formation, the precipitation of Ge from Ag-Ge alloys, and the penetration of Ge into SiO2 are suggested for the roughing mode. This demonstration of ultrasmooth Ag thin films would offer an advantageous material platform with scalability for applications such as optics, plasmonics, and photonics.

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Section: ■ Results and Discussionmentioning

confidence: 96%

Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited with a Germanium Nucleation Layer

et al. 2015

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“…The binary Ag-Ge phase diagram is characterised by an eutectic reaction at 651 °C with small but appreciable solubility of Ge in fcc Ag and negligible solubility of Ag in Ge [14,15] (see Tables 1 and 2). These data are confirmed in a more recent reassessement [16]; the formation of a metastable phase with hcp structure was obtained by rapid quenching as reported in [17].…”

Section: Ag-ge Systemmentioning

confidence: 99%

Design of Ag-Ge-Zn braze/solder alloys: Experimental thermodynamics and surface properties

Delsante

Novaković

et al. 2017

J min metall B Metall

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The experimental investigation of the Ag-Ge-Zn phase diagram was performed by using combined microstructural and Differential Scanning Calorimeter (DSC) analyses. The samples were subjected to thermal cycles by a heat-flux DSC apparatus with heating and cooling rate of 0.5 or 0.3 °C/min. The microstructure of the samples, both after annealing and after DSC analysis, was studied by optical and scanning electron microscopy coupled with EDS (Energy Dispersive Spectroscopy) analysis. Considering the slow heating and cooling rate adopted, the isothermal section at room temperature was established. No ternary compounds were observed. On the basis of the experimental investigations the invariant reactions were identified. Combining the thermodynamic data on the Ag-Ge, Ag-Zn and Ge-Zn liquid phases by means of Butler's model the surface tension of Ag-Ge-Zn alloys was calculated.

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“…One important reason is that, by introducing no additional elements to the melt, the number of potentially undesired phases that may result Figure 4.1 Binary phase diagrams of (a) Dy I Go (Massalski, 1990), (b) Dy -Ag (Gschneidner, 1985) and ( c ) Ag -Ge (Olesinski, 1988).…”

Section: Growth Of Ternary Compounds From Self-fluxmentioning

confidence: 99%

Field-induced magnetic phase transitions and correlated electronic states in the hexagonal RAgGE and RPtIn series

Morosan

2005

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The Ag-Ge (silver-germanium) system

Cited by 36 publications

References 25 publications

Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited with a Germanium Nucleation Layer

Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited with a Germanium Nucleation Layer

Design of Ag-Ge-Zn braze/solder alloys: Experimental thermodynamics and surface properties

Field-induced magnetic phase transitions and correlated electronic states in the hexagonal RAgGE and RPtIn series

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