Polycrystalline samples of quaternary (Cu–III–Se2)1–x (NbSe)x alloys (III: Ga, In) with x = 1/2 (nominally CuNbGaSe3 and CuNbInSe3) were prepared by the usual melt and anneal technique. The analysis showed a large solubility of Nb in the ternary structures. The unit cell parameters of CuNbGaSe3 (a = 5.617 ± 0.001 Å; c = 11.024 ± 0.003 Å; c /a = 2.02; V = 348 ± 1 Å3) and CuNbInSe3 (a = 5.779 ± 0.001 Å; c = 11.620 ± 0.003 Å; c /a = 2.01; V = 388 ± 1 Å3) were very close to those of the respective ternaries, CuGaSe2 and CuInSe2. Nevertheless, indexation of the diffraction pattern of CuNbGaSe3 suggested, for this alloy, a space group transition from I$ \bar 4 $2d to P$ \bar 4 $2c analogous to CuFeInSe3, recently reported. From DTA measurements it was found that CuNbGaSe3 and CuNbInSe3 are ordered samples with order–disorder transition temperatures of ∼976 K and ∼910 K, and melted incongruently at ∼1185 K and ∼1046 K, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)