The Al−Sn (Aluminum-Tin) System

McAlister, A. J.; Kahan, D. J.

doi:10.1007/bf02868095

Cited by 90 publications

(35 citation statements)

References 9 publications

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“…One immediately notices that the before observed melting peaks are missing. This clearly suggests a complete solution of the available 0.025 at% tin and indium at 620 ° C, as predicted by the phase diagrams in the literature . However, both thermograms show a small exothermic peak (A, B), which could be attributed to the precipitation of In and Sn (see TEM results in Section 3).…”

Section: Resultssupporting

confidence: 78%

Precipitation Behavior in High‐Purity Aluminium Alloys with Trace Elements – The Role of Quenched‐in Vacancies

Lotter¹,

Muehle

Elsayed

et al. 2018

Physica Status Solidi (a)

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The main mechanism for the strengthening of aluminium‐copper alloys of the 2xxx type is hardening by copper‐rich precipitates. However, their size, distribution, and crystal structure determine the final mechanical properties of the material. It has been shown that alloying additionally small amounts of cadmium, indium, or tin influences the precipitation behavior as well as the final strength of Al‐Cu alloys. The binding energy of quenched‐in vacancies to trace elements in the aluminium matrix is recognized as an influence on the diffusion behavior of the copper atoms and thus the preferred type of precipitate changes. A precondition for this influence is the transition of trace elements into solid solution during the solution heat treatment. In the present work, solubility and interaction with quenched‐in vacancies is analyzed for the elements In, Sn, Sb, Bi, and Pb in high‐purity binary alloys using differential scanning calorimetry (DSC), positron annihilation lifetime spectroscopy (PALS) as well as scanning and transmission electron microscopy (SEM, TEM). The results confirm on one hand literature data and deliver on the other hand new structural details. A subsequent anneal at moderate temperature leads to finely distributed precipitations on the nanoscale.

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Section: Resultssupporting

confidence: 78%

Precipitation Behavior in High‐Purity Aluminium Alloys with Trace Elements – The Role of Quenched‐in Vacancies

Lotter¹,

Muehle

Elsayed

et al. 2018

Physica Status Solidi (a)

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“…S8. The Al–Sn binary phase diagram suggests that a eutectic Al–Sn–O alloy may be formed through the absorption of Al(g), Al 2 O(g), and O(g) . Al 2 O 3 nuclei can then form on the surface of the Sn particles once the eutectic alloy becomes saturated through the successive absorption of these gas‐phase species.…”

Section: Resultsmentioning

confidence: 91%

Direct Synthesis of Alumina Nanowires on Ceramic Substrates Using Sn Catalysts

et al. 2015

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Direct integration of nanostructures into macroscopic substrates is very important for their practical applications. In this work, we report a simple method that can be introduced for the Sn‐catalyzed growth of alumina nanowires on ceramic substrates such as porous disk, monolith, and foam. Our study focuses on the role of the Sn catalysts in the formation mechanisms governing nanowire growth. Using the proposed approach, hair‐ or grass‐like tufts of 20 nm diameter nanowires grow on the surface of the ~3 μm diameter Sn particles, in a tip growth mechanism. The nanowires of α‐phased polycrystalline structure grow and are packed via a complex process involving batch‐by‐batch, branching, and amalgamation growth. The detailed observations reveal that the Sn catalyst is key to tailoring the growth patterns of the nanowires. In addition, cathodoluminescence studies highlight the potential optical applications of the alumina nanowires.

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“…20 Assuming that the saturation concentration of Al in SAC is also close to 0.6%, then this explains why there is little difference between the SAC-2Al and SAC-0.5Al in Fig. 5.…”

Section: B Sac-al/cu Systemmentioning

confidence: 91%

Massive spalling of Cu-Zn and Cu-Al intermetallic compounds at the interface between solders and Cu substrate during liquid state reaction

Kotadia

Panneerselvam

Mokhtari

et al. 2012

Journal of Applied Physics

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The interfacial intermetallic compound (IMC) formation between Cu substrate and Sn-3.8Ag-0.7Cu-X (wt.%) solder alloys has been studied, where X consists of 0–5% Zn or 0–2% Al. The study has focused on the effect of solder volume as well as the Zn or Al concentration. With low solder volume, when the Zn and Al concentrations in the solder are also low, the initial Cu-Zn and Al-Cu IMC layers, which form at the solder/substrate interface, are not stable and spall off, displaced by a Cu6Sn5 IMC layer. As the total Zn or Al content in the system increases by increasing solder volume, stable CuZn or Al2Cu IMCs form on the substrate and are not displaced. Increasing concentration of Zn has a similar effect of stabilizing the Cu-Zn IMC layer and also of forming a stable Cu5Zn8 layer, but increasing Al concentration alone does not prevent spalling of Al2Cu. These results are explained using a combination of thermodynamic- and kinetics-based arguments.

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The Al−Sn (Aluminum-Tin) System

Cited by 90 publications

References 9 publications

Precipitation Behavior in High‐Purity Aluminium Alloys with Trace Elements – The Role of Quenched‐in Vacancies

Precipitation Behavior in High‐Purity Aluminium Alloys with Trace Elements – The Role of Quenched‐in Vacancies

Direct Synthesis of Alumina Nanowires on Ceramic Substrates Using Sn Catalysts

Massive spalling of Cu-Zn and Cu-Al intermetallic compounds at the interface between solders and Cu substrate during liquid state reaction

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