The Analysis Model of AlGaN/GaN HEMTs with Electric Field Modulation Effect

Yang, Luoyun; Duan, Baoxing; Dong, Ziming; Wang, Yandong; Yang, Yong

doi:10.1080/02564602.2019.1675542

Cited by 7 publications

(5 citation statements)

References 32 publications

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“…Table (2) presents the comparison between the previously reported work and the present study. The drain current variation obtained in the present work is higher than the previous for neutral bio-molecules, indicating higher sensitivity.…”

Section: Comparative Analysismentioning

confidence: 81%

“…They showed very low sensitivity towards biomolecules and are not compatible with high-temperature conditions due to their small band-gap compared to GaN. The polarization of Al-GaN/AlN/GaN HEMT generates the electric field that pulls the surface state electrons to the empty conduction band (CB) states at the heterojunction, resulting in 2DEG formation [2]. The presence of high sheet charge density and mobility increases the sensitivity [3].…”

mentioning

confidence: 99%

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Performance Analysis of MOS-HEMT as a Biosensor: A Dielectric Modulation Approach

Poonia

Bhat

Periasamy

et al. 2021

Preprint

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In this work, we have reported the simulation study and electrical properties of MOS-HEMT with a cavity on the source side for bio-sensing applica- tions. The effect of the neutral and charged biomolecules on the sensitivity and concentration of electrons is an- alyzed. The increase of dielectric observed drain cur- rent decreases and increases due to the rise of the pos- itive charge of the biomolecules. The different cavity lengths are taken into consideration to analyze the per- formance of the device. The maximum threshold volt- age sensitivity obtained for keratin is 26% and 51% for charged biomolecules at 500mm cavity length. The ef fect of the AlGaN barrier mole fraction on sensitivity was also studied and optimized. The maximum sen- sitivity obtained is 74.04% for charged biomolecules. The device shows high stability under high-temperature conditions. The MOS-HEMT structure is optimized and analyzed using the ATLAS Silvaco device simulation tool.

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Section: Comparative Analysismentioning

confidence: 81%

mentioning

confidence: 99%

Performance Analysis of MOS-HEMT as a Biosensor: A Dielectric Modulation Approach

Poonia

Bhat

Periasamy

et al. 2021

Preprint

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“…We speculate that the negatively polarized electric field introduced by the GaN cap layer reduced the potential at the top of the barrier layer. It increased the vertical electric field in the GaN barrier layer, thus reducing the lateral electric field crowding [22][23][24][25]. As the thickness of the GaN cap increased, the potential at the top of the barrier layer further decreased and the electric field distribution further homogenized.…”

Section: Resultsmentioning

confidence: 99%

Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs

Nie,

Wang,

Liu

et al. 2024

Micromachines

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We prepared AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap thicknesses of 0, 1, 3, and 5 nm and compared the material characteristics and device performances. It was found that the surface morphology of the epitaxial layer was effectively improved after the introduction of the GaN cap layer. With the increase of the GaN cap thickness, the carrier concentration (ns) decreased and the carrier mobility (μH) increased. Although the drain saturation current (IdSat) of the device decreased with the increasing GaN cap thickness, the excessively thin GaN layer was not suitable for the cap layer. The thicker GaN layer not only improved the surface topography of the epitaxial layer but also effectively improved the off-state characteristics of the device. The optimal cap thickness was determined to be 3 nm. With the introduction of the 3 nm GaN cap, the IdSat was not significantly reduced. However, both the off-state gate leakage current (IgLeak) and the off-state leakage current (IdLeak) decreased by about two orders of magnitude, and the breakdown voltage (BV) increased by about 70 V.

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“…Traditional diodes require input and grounding terminals for normal operation, posing challenges in packaging technology for micrometer-scale structures and substantially increasing manufacturing costs. Gallium Nitride (GaN), as a third-generation semiconductor, features a unique GaN/AlGaN heterostructure, generating a two-dimensional electron gas (2DGE) at the interface of these two materials [33,34]. This implies that the structure remains in a conductive state without applying external excitation voltage.…”

Section: Introductionmentioning

confidence: 99%

Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs

Liu,

Ibrahim,

Majid

et al. 2024

J. Phys. D: Appl. Phys.

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Metamaterial absorbers allow electromagnetic waves to be converted into heat energy based on impedance matching. However, passive metamaterial absorbers exhibit fixed absorption characteristics, limiting their flexibility. This work demonstrates tunable microwave and terahertz absorbers by integrating adjustable resistors into the metamaterial units. First, a microwave absorber from 1-5 GHz was designed by embedding PIN diodes with voltage-controlled resistance. Calculations, simulations, and measurements verified two separate absorption peaks over 90% when optimized to a resistance of 250 Ω. The absorption frequencies shifted based on the resistor tuning. Building on this, a terahertz absorber was modeled by substituting gallium nitride high electron mobility transistors (GaN HEMTs) as the adjustable resistor component. The GaN HEMTs were controlled by an integrated gate electrode to modify the two-dimensional electron gas density, allowing resistance changes without external voltage terminals. Simulations revealed two absorption peaks exceeding 90% absorption at 0.34 THz and 1.06 THz by adjusting the equivalent resistance from 180 Ω to 380 Ω, and the tunable resistance is verified by DC measurement of single GaN HEMT in the unit. This work demonstrates how integrating adjustable resistors enables dynamic control over the absorption frequencies and bandwidths of metamaterial absorbers. The proposed geometries provide blueprints for tunable microwave and terahertz absorbers.

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The Analysis Model of AlGaN/GaN HEMTs with Electric Field Modulation Effect

Cited by 7 publications

References 32 publications

Performance Analysis of MOS-HEMT as a Biosensor: A Dielectric Modulation Approach

Performance Analysis of MOS-HEMT as a Biosensor: A Dielectric Modulation Approach

Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs

Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs

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