The Analysis of Dielectric Breakdown in Cu/Low-k Interconnect System

Abstract

Novel test structures were designed for TEM analysis to examine the origin of dielectric breakdown in Cu/low-k interconnect systems, and it was found to be associated with interfacial delamination. Using an electrostatic discharge zapping technique enables the dielectric breakdown monitoring progressively from the interfacial delamination between a SiC capping layer and a SiOC inter-dielectric layer to the catastrophic thermal breakdown of Cu/low-k interconnect system. The intermetal dielectric leakage current increased as the delamination becomes wider in terms of the number of electrostatic zaps.