The analysis of factors limiting the maximum output power of broad-area laser diodes

Wenzel, H.; Crump, P.; Pietrzak, A.; Röder, C.; Wang, X.; Erbert, G.

doi:10.1007/s11082-010-9372-4

Cited by 21 publications

(6 citation statements)

References 13 publications

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“…The optical confinement factor of the DQW totals 1.8%. We performed a one-dimensional simulation in the transverse cross section neglecting any lateral effects as outlined in [91] and [92]. The pre-factor for the gain and the Shockley-Read-Hall recombination life times ( τ n = τ p = 1.3 ns identical for all layers) have been fitted on the results of lengthdependent pulsed measurements of threshold current and slope efficiency of uncoated devices.…”

Section: B Worked Examplementioning

confidence: 99%

Basic Aspects of High-Power Semiconductor Laser Simulation

Wenzel

2013

IEEE J. Select. Topics Quantum Electron.

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Abstract-The aim of this paper is to review some of the models and solution techniques used in the simulation of high-power semiconductor lasers and to address open questions. We discuss some of the peculiarities in the description of the optical field of wide-aperture lasers. As an example, the role of the substrate as a competing waveguide in GaAs-based lasers is studied. The governing equations for the investigation of modal instabilities and filamentation effects are presented and the impact of the thermal-lensing effect on the spatiotemporal behavior of the optical field is demonstrated. We reveal the factors that limit the output power at very high injecton currents based on a numerical solution of the thermodynamic based drift-diffusion equations and elucidate the role of longitudinal spatial holeburning.

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Section: B Worked Examplementioning

confidence: 99%

Basic Aspects of High-Power Semiconductor Laser Simulation

Wenzel

2013

IEEE J. Select. Topics Quantum Electron.

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“…В основе методики, используемой в этой работе, лежит на первый взгляд простая идея: поглощение излучения на свободных носителях будет тем сильнее, чем больше концентрация носителей заряда (например, см. [11]). Для большинства полупроводниковых гетероструктур протекание электрического тока сопровождается накоплением избыточных носителей заряда в ее слоях.…”

Section: методика и экспериментальная схема измеренийunclassified

“…После проведения измерений для случаев одного и двух подключенных сегментов была сделана оценка показателя поглощения по формуле (4). Согласно теории [11], показатель поглощения прямо пропорционален концентрации свободных носителей заряда:…”

Section: расчет поглощения в образце при протекании электрического токаunclassified

Исследование Пространственной И Токовой Динамики Оптических Потерь В Полупроводниковых Лазерных Гетероструктурах Методом Оптического Зондирования

Гаврина¹,

Соболева²,

Подоскин³

et al. 2020

Физика И Техника Полупроводников

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The spatiotemporal dynamics of optical losses and carrier density in a heterostructure of a semiconductor laser with a segmented contact were studied using an optical probe technique based on the coupling of probe radiation with a wavelength of 1560 nm into a semiconductor laser chip under investigation based on an AlGaAs/ InGaAs/ GaAs heterostructure and emitting at a wavelength of 1010 nm. It has been shown that the use of a probe beam with a wavelength of 1560 nm makes it possible to ensure the sensitivity of the measurement of internal optical losses of no worse than 1 cm-1. The use of a segmented design of the current pumping region made it possible to estimate the absolute value of internal optical losses. It was shown that a change in the configuration of the Fabry-Perot eigenmodes of the laser affects the distribution of charge carriers and internal optical losses both in the current pump region and in the passive part of the laser chip that is not pumped by the current.

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“…Транспорт носителей заряда через волноводную область исследован, например, в работах [13][14][15][16][17][18][19]. В работах, посвященных транспорту носителей, обычно предполагается мгновенный захват в КЯ.…”

Section: Introductionunclassified

Рабочие Характеристики Полупроводниковых Лазеров На Квантовых Ямах В Зависимости От Ширины Волноводной Области

Соколова¹,

Пихтин²,

Слипченко³

et al. 2021

Физика И Техника Полупроводников

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Operating characteristics of semiconductor quantum well (QW) lasers are theoretically studied in terms of the thickness of the waveguide region [optical confinement layer (OCL)]. We calculate the maximum modal gain, optical confinement factor (in QW, OCL, and cladding layers), threshold current density, electron and hole densities (in QW and OCL), internal optical loss (in QW, OCL, and cladding layers), internal differential quantum efficiency, stimulated and spontaneous recombination currents, and output optical power of the laser as functions of the OCL thickness. It is shown that up to the pump current density 50 kA/cm2 the output power of the considered lasers depends only slightly on the OCL thickness in the range of thicknesses 1.5–2.8 m. This result is important for designing high brightness lasers as broadened waveguides are used in such lasers to attain low beam divergence. At high pump current densities, the output power is shown to have a maximum as a function of the OCL thickness.

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The analysis of factors limiting the maximum output power of broad-area laser diodes

Cited by 21 publications

References 13 publications

Basic Aspects of High-Power Semiconductor Laser Simulation

Basic Aspects of High-Power Semiconductor Laser Simulation

Исследование Пространственной И Токовой Динамики Оптических Потерь В Полупроводниковых Лазерных Гетероструктурах Методом Оптического Зондирования

Рабочие Характеристики Полупроводниковых Лазеров На Квантовых Ямах В Зависимости От Ширины Волноводной Области

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