The analysis of IGBT module based on thermal simulation technology

Zhang, Kun; Xiao, Hong; Zhu, Gang; Mao, Xingchao; Zhang, Weiwei; Chen, Fangzhou; Guo, Xiaotong; Líu, Hao

doi:10.1109/icept56209.2022.9872705

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…In [18], there is detailed research of reliability and failure issues in relation to a five-level inverter, where a T-NPC part was used. The issue of the reliability of IGBT transistor-based modules is also the subject of separate studies, as demonstrated in publications [31][32][33][34][35]. In [35], there is an analysis of the factors influencing the failure rate of the IGBT modules.…”

Section: Introductionmentioning

confidence: 99%

T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver

Mondzik

2023

Energies

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This article presents the concept of switching and conduction loss reduction in a T-NPC inverter based on IGBT transistors. The method of limiting switching losses involves the connection of an LC circuit designed to cause transistors in vertical branches to shut down under zero voltage conditions. In order to reduce conduction losses, it was proposed to use two reverse blocking transistors connected anti-parallel in the horizontal branch of the inverter. To ensure safe operation of the transistors, a gate driver proposal for controlling the IGBT reverse blocking transistor is presented. The solution is characterized by a changed part of the driver, responsible for short-circuit protection. It eliminates excessive, destructive currents that can potentially flow through the driver circuit under the influence of the power supply voltage of the power circuit connected backwards to the controlled transistor. Examples of applications and benefits of the proposed solution are presented and verified with laboratory tests.

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Section: Introductionmentioning

confidence: 99%

T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver

Mondzik

2023

Energies

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Dielectric and thermal properties characterisation and evaluation of novel epoxy materials for high‐voltage power module packaging

Wang,

Yang,

Cao

et al. 2024

High Voltage

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Internal insulation of high‐voltage power modules is facing interesting failure risks, including high temperature overheating, breakdown fault, material cracking etc., so it is imperative to urgently develop new dielectric materials with high thermal conductivity (λ), outstanding electrical insulation, and thermal stability properties. A method to construct controllable liquid crystalline cross‐linking networks based on the synthesis of biphenyl epoxy monomer and the change of curing agent structures and curing temperature is proposed. The uniform nematic rod‐like liquid crystalline domains were obtained by using 4,4‐diaminodiphenylmethane as a curing agent under a pre‐curing temperature of 105°C. The resulting film (abbreviated as TD‐105) exhibited λ up to 0.53 W m−1 K−1 and a dielectric breakdown strength of 57.69 kV mm−1, which showed a simultaneous enhancement of 178% and 16%, respectively, compared to traditional bisphenol A epoxy resin. Moreover, it also exhibited lower dielectric loss and magnitude of partial discharge while having higher glass‐transition temperature (190°C). A novel idea for the development of high‐performance epoxy insulating materials for the application of high‐voltage and large‐power electrical equipment is provided.

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The analysis of IGBT module based on thermal simulation technology

Cited by 2 publications

References 4 publications

T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver

T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver

Dielectric and thermal properties characterisation and evaluation of novel epoxy materials for high‐voltage power module packaging

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