The analytical model for crosstalk noise of current-mode signaling in coupled RLC interconnects of VLSI circuits

Xu, Peng; Zhang, Pan

doi:10.1088/1674-4926/38/9/095003

Cited by 7 publications

(3 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This section investigates the impacts of different dielectric materials on crosstalk delay, transfer gain, and noise output signal of coupled MLGNR interconnect at global level of 7 nm technology node. All geometrical and physical electrical parameters were extracted from references [33,34] In general, the sizes of driver and load are 100 times larger than that of the minimum-sized gate at global level (100 µm ≤ L gnr ≤ 10 mm) interconnects [35], then their values can be rewritten as, R d ' = R d /100, C d ' = C d × 100 and C l ' = C l × 100. All the numerical simulation results presented in the next section were obtained by carrying out the MATLAB R2013a.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

Self Cite

View full text Add to dashboard Cite

The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.

show abstract

Section: Resultsmentioning

confidence: 99%

“…minimum-sized gate at global level (100 µm ≤ Lgnr ≤ 10 mm) interconnects [35], then their values can be rewritten as, Rd' = Rd/100, Cd' = Cd × 100 and Cl' = Cl × 100. All the numerical simulation results presented in the next section were obtained by carrying out the MATLAB R2013a.…”

Section: Resultsmentioning

confidence: 99%

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

Self Cite

View full text Add to dashboard Cite

show abstract

“…The geometrical and physical parameters are extracted from [3], [37] [38], the sizes of driver and load are usually 100 times greater than that of the minimum-size gate [6], then their values can be redefined as,…”

Section: Casementioning

confidence: 99%

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

Based on transmission line modeling, a new technology of collaborative applying the ultralow-k dielectric and the high-k dielectric materials in coupled multilayer graphene nanoribbon (MLGNR) interconnects (i.e., case 4) to reduce propagation delay and to expand 3-dB bandwidth of the conventional pristine (undoped) MLGNR interconnects is proposed in this paper. By using the decoupling technique and ABCD parameter matrix approach, the transfer function of the equivalent circuit model for coupled MLGNR interconnects is derived to obtain step response, propagation delay, transfer gain and 3-dB bandwidth under in-phase and out-of-phase crosstalk modes at global level of 7.5 nm technology node, which is based on the defined four cases. The results show that the maximum reduction of propagation delay between the proposed new technology (case 4) and the conventional MLGNR interconnects (case 1) can reach 15.911 ns at out-of-phase crosstalk mode for an interconnect length of 4000 µm. The corresponding 3-dB bandwidth for them can be expanded over 2.978 times in the same length as the former. It is demonstrated that the proposed case 4 can obviously reduce the propagation delay and enhance the transfer gain and 3-dB bandwidth compared with the conventional case 1. Moreover, it is found that the coupled MLGNR interconnect under in-phase mode outperform that under out-of-phase mode in terms of propagation delay, transfer gain and 3-dB bandwidth at the same condition. In addition, it is manifested that the victim line of two-line coupled MLGNR interconnects have lesser propagation delay, higher transfer gain and larger 3-dB bandwidth, as compared to three-line coupled MLGNR interconnects at the same case. The proposed new technology in this paper would be beneficial to improve the performance of MLGNR interconnects and to provide the guidelines for the design of next generation on-chip MLGNR interconnect system. INDEX TERMS MLGNR interconnects, step response, propagation delay, transfer gain, 3-dB bandwidth, ultra-low-k dielectric, high-k dielectric. I. INTRODUCTION With the continuous advancement of semiconductor manufacturing technology in very large-scale integrated (VLSI) circuits, a series of performance degradation on the conventional copper (Cu) based interconnects have been reported, such as the larger resistivity, electro-migration and smaller

show abstract

Modeling and performance analysis of coupled multilayer graphene nanoribbon (MLGNR) interconnects with intercalation doping

Zou,

Pan,

2023

Microelectronics Journal

View full text Add to dashboard Cite

The analytical model for crosstalk noise of current-mode signaling in coupled RLC interconnects of VLSI circuits

Cited by 7 publications

References 13 publications

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Modeling and performance analysis of coupled multilayer graphene nanoribbon (MLGNR) interconnects with intercalation doping

Contact Info

Product

Resources

About