The anisotropic distribution of dislocations and tilts in metamorphic GaInAs/AlInAs buffers grown on GaAs substrates with miscut angles toward (111)A

Sun, Yanhong; Li, Kuilong; Dong, Junping; Zeng, Xiaolin; Sheng, Yu; Zhao, Yongming; Zhao, Chunyu; Yang, Hui

doi:10.1016/j.jallcom.2014.01.206

Cited by 10 publications

(4 citation statements)

References 22 publications

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“…Подобное поведение приводит к несимметричной релаксации напряжений и в итоге служит причиной возникновения анизотропии электронного транспорта в метаморфных материалах, что отрицательно сказывается на характеристиках приборов [12,13]. Кроме того, несимметричность релаксации напряжений становится причиной развития морфологии ростовой поверхности [12,14]. Одним из эффективных методов подавления несимметричной релаксации напряжений является использование подложек, отклоненных от сингулярной грани [14][15][16].…”

Section: Introductionunclassified

“…Кроме того, несимметричность релаксации напряжений становится причиной развития морфологии ростовой поверхности [12,14]. Одним из эффективных методов подавления несимметричной релаксации напряжений является использование подложек, отклоненных от сингулярной грани [14][15][16].…”

Section: Introductionunclassified

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Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

Емельянов¹,

Vasev²,

Семягин³

et al. 2019

Журнал Технической Физики

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The influence of substrate misorientation degree on the composition and morphology of layers during molecular-beam epitaxy of InAsxSb1−x solid solutions on the GaAs surface was studied. The GaAs wafers with orientation (001), which were miscuted in the [110] direction by 0, 1, 2 and 5◦, were used as substrates. The growth of heterostructures was performed for temperatures of 310◦C and 380◦C (lower and upper boundaries for the temperature range of structurally perfect InAsx Sb1−x films formation, respectively). The influence of the arsenic molecular form (As2 or As4) on the composition of layers was studied. Studies of composition and structural properties were carried out using high-resolution X-ray diffractometry (HRXRD) and atomic force microscopy (AFM). It was established that in the series of misorientation from 0 to 5◦ the arsenic fraction x increases consecutively with the use of both flux of As2 and flux of As4 molecules. When the flux of As2 molecules is used, the fraction x increases insignificantly (in 1.05 times) with a rise of misorientation degree, but when using As4 molecules, x increases in 1.75 times. The increase of the growth temperature leads to the rise of the arsenic fraction in the solid solution. The morphology of the surface improves during increasing of misorientation degree at a low growth temperature and degrades at high temperatures.

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Section: Introductionunclassified

Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

Емельянов¹,

Vasev²,

Семягин³

et al. 2019

Журнал Технической Физики

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“…[7][8][9][10] Well-designed metamorphic buffers 11) should not only sufficiently relieve strain, but also effectively prevent the threading dislocation pile-up, which acts as nonradiative recombination centers during strain relaxation, to achieve epitaxial layers with an adequately small surface roughness. In order to reduce threading dislocation density (TDD) and obtain high-performance devices, various metamorphic buffers such as a thick uniform buffer, 12) a compositionally linearly graded buffer, 13,14) and a step-graded 15,16) or reverse-graded buffer [17][18][19] have been investigated to grow lattice-mismatched heteroepitaxial devices. Besides those, overshoot on the top buffer [20][21][22] and doping in a buffer [23][24][25] are also proved to be effective for strain relaxation and TDD reduction.…”

Section: Introductionmentioning

confidence: 99%

Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates

Sun

Song

Zhao

et al. 2016

Jpn. J. Appl. Phys.

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High-quality strain-relaxed InP layers with undulating step-graded Al(Ga)InAs buffers were grown on GaAs substrates by metal–organic chemical vapor deposition. Transmission electron microscopy, high-resolution electron microscopy (HREM), atom force microscopy, and photoluminescence were carried out to characterize the metamorphic buffers. V-shaped dislocations in [001] Al(Ga)InAs reverse-graded layers were observed by HREM and the behavior of reverse-graded layers was simulated theoretically using analytical models. Both the experimental and theoretical results indicated that the insertion of reverse-graded layers with appropriately designed thicknesses and In grading coefficients promotes the annihilation and coalescence reactions between threading dislocations and reduces threading dislocations density.

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“…Thus many researchers have investigated the mechanism of asymmetries in InGaAs layers grown on misoriented GaAs (001) substrates. [14][15][16] France et al studied the asymmetric strain relaxation in InGaAs by an in situ multibeam optical stress sensor (MOSS) through controlling the growth temperature and V/III ratio. [11] Limited attention has been paid to InGaAs with symmetric properties.…”

Section: Introductionmentioning

confidence: 99%

Control of symmetric properties of metamorphic In _0.27 Ga _0.73 As layers by substrate misorientation

et al. 2016

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Asymmetry in dislocation density and strain relaxation has a significant impact on device performance since it leads to anisotropic electron transport in metamorphic materials. So it is preferred to obtain metamorphic materials with symmetric properties. In this paper, we grew metamorphic In 0.27 Ga 0.73 As epilayers with symmetric low threading dislocation density and symmetric strain relaxation in two ⟨110⟩ directions using InAlGaAs buffer layers on 7 ∘ misoriented GaAs (001) substrates. To understand the control mechanism of symmetric properties of In 0.27 Ga 0.73 As layers by the substrate miscut angles, In 0.27 Ga 0.73 As grown on 2 ∘ and 15 ∘ misoriented substrates were also characterized as reference by atomic force microscopy, transmission electron microscopy, and high resolution triple axis x-ray diffraction. The phase separation and interaction of 60 ∘ misfit dislocations were found to be the reasons for asymmetry properties of In 0.27 Ga 0.73 As grown on 2 ∘ and 15 ∘ substrates, respectively. Photoluminescence results proved that the In 0.27 Ga 0.73 As with symmetric properties has better optical properties than the In 0.27 Ga 0.73 As with asymmetric properties at room temperature. These results imply that high quality metamorphic In 0.27 Ga 0.73 As can be achieved with controllable isotropic electron transport property.

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The anisotropic distribution of dislocations and tilts in metamorphic GaInAs/AlInAs buffers grown on GaAs substrates with miscut angles toward (111)A

Cited by 10 publications

References 22 publications

Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates

Control of symmetric properties of metamorphic In _0.27 Ga _0.73 As layers by substrate misorientation

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The anisotropic distribution of dislocations and tilts in metamorphic GaInAs/AlInAs buffers grown on GaAs substrates with miscut angles toward (111)A

Cited by 10 publications

References 22 publications

Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates

Control of symmetric properties of metamorphic In 0.27 Ga 0.73 As layers by substrate misorientation

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Control of symmetric properties of metamorphic In _0.27 Ga _0.73 As layers by substrate misorientation