The Anisotropic Plasma-Enhanced Chemical Vapor Deposition SiO₂/Spin-on Glass Process for 0.35 µm Technology

Abstract

By a proper choice of the excitation energy per nucleon we analyze the mass distributions of the nuclear fragmentation at various excitation energies. Starting from low energies (between 0.1 and 1 MeV nucleon −1 ) up to higher energies about 12 MeV n −1 , we classified the mass yield characteristics for heavy nuclei (A > 200) on the basis of a statistical multifragmentation model (SMM). The evolution of fragment distribution with the excitation energy show that the present results exhibit the same trend as the experimental ones. PACS numbers: 24.75.+i, 25.85.−w

Plasma enhanced chemical vapor deposition of SiO2 using novel alkoxysilane precursors

“…1 Dielectric materials such as silicon dioxide ͑SiO 2 ͒ are often deposited by PECVD for use as gate oxides, 2,3 intermetal dielectrics, 4 or passivation layers for integrated circuits. 5,6 The main advantage of PECVD over other deposition methods such as thermal CVD 7 is that deposition of good quality SiO 2 can be performed at low substrate temperatures ͑Ͻ350°C͒ from SiH 4 /O 2 or SiH 4 /N 2 O plasmas.…”