“…Several studies provided evidence, including photoemission spectroscopy and electron transport, that the fundamental gaps of HfTe 5 , and similarly ZrTe 5 , can be strain-tuned across a weak to a strong topological insulator phase. ,,, Moreover, the location of additional, trivial carrier pockets depends on strain as well. , Therefore, our results may explain partly the considerable variation of results seen in the literature. While some studies reported a quasi-quantized Hall resistance of gapped Dirac Fermions with well-developed Shubnikov-de-Haas oscillations, , other studies reported signatures of anomalous Hall effects with largely suppressed Shubnikov-de-Haas oscillations, ,, sometimes even in nominally identical materials, and further studies described the transport features taking into account additional carrier pockets. − Based on the substantial inhomogeneity of exfoliated films observed here, it may be advantageous to carefully and systematically differentiate between measurements on bulk crystal (mm-scale) and exfoliated films (μm-scale). We note that, in previous work on HfTe 5 , we already observed such systematic differences in the magnetotransport properties of bulk reference crystals and exfoliated films .…”