The Antiferroelectric ↔ Ferroelectric Phase Transition in Lead‐Containing and Lead‐Free Perovskite Ceramics

Tan, Xiaoli; Ma, Cheng; Frederick, J.; Beckman, Scott P.; Webber, Kyle G.

doi:10.1111/j.1551-2916.2011.04917.x

Cited by 363 publications

(257 citation statements)

References 175 publications

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“…9 Since then, even higher strains (0.48%) have been reported, [12][13][14][15] primarily in modified [Bi 1/2 (Na 1-x K x ) 1/2 ]TiO 3 compositions. 16,17 These values are higher than those measured in piezoelectric Pb(Zr 1Àx Ti x )O 3 and electrostrictive Pb(Mg 1/3 Nb 2/3 )O 3 -based ceramics, and are believed to trace their origin to the unique P4bm relaxor ferrielectric phase [18][19][20] in the base compound (Bi 1/2 Na 1/2 )TiO 3 . Under applied electric fields, the relaxor phase, with nanometer-sized domains, transforms into the ferroelectric phase, with micrometer-sized domains.…”

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confidence: 54%

Giant strain with low cycling degradation in Ta-doped [Bi1/2(Na0.8K0.2)1/2]TiO3 lead-free ceramics

Liu

Tan

2016

Journal of Applied Physics

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Articles you may be interested inHierarchical domain structure of lead-free piezoelectric (Na1/2 Bi1/2)TiO3-(K1/2 Bi1/2)TiO3 single crystals J. Appl. Phys. 119, 174102 (2016); 10.1063/1.4948478Phase structure and piezoelectric properties of (1−x)K0.48Na0.52Nb0.95Sb0.05O3-x(Bi0.5Na0.5)0.9(Li0.5Ce0.5)0.1ZrO3 lead-free piezoelectric ceramics J. Appl. Phys. 119, 034101 (2016) . These values are greater than most previously reported lead-free polycrystalline ceramics and can even be compared with some lead-free piezoelectric single crystals. Additionally, this ceramic displays low cycling degradation; its electrostrain remains above 0.55% even after undergoing 10 000 cycles of 650 kV/cm bipolar fields at 2 Hz. Therefore, Ta-doped [Bi 1/2 (Na 0.8 K 0.2 ) 1/2 ]TiO 3 ceramics show great potential for large displacement devices. Published by AIP Publishing.

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confidence: 54%

Giant strain with low cycling degradation in Ta-doped [Bi1/2(Na0.8K0.2)1/2]TiO3 lead-free ceramics

Liu

Tan

2016

Journal of Applied Physics

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“…), polarization magnitude P (µC/cm 2 ), estimated equilibrium strain for the (001)C (σc) and (100)C (σa) matching planes, and volume expansion ∆V /V (%) of selected polar structures. ferroelectric phase [11].…”

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“…Despite extensive studies and characterization, PZO continues to offer insights into the origin and complexity of antiferroelectricity [10,11]. In bulk form, PZO has a cubic perovskite structure at high temperatures and a nonpolar orthorhombic ground state below T c ∼ 505 K. The ground state has space group Pbam [12, 13] and unit cell dimensions √ 2a 0 × 2 √ 2a 0 × 2a 0 with respect to the reference lattice constant a 0 .…”

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Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3from first principles

Reyes‐Lillo

Rabe

2013

Phys. Rev. B

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Density functional calculations are performed to study the effect of epitaxial strain on PbZrO3. We find a remarkably small energy difference between the epitaxially strained polar R3c and nonpolar Pbam structures over the full range of experimentally accessible epitaxial strains -3 % η 4 %. While ferroelectricity is favored for all compressive strains, for tensile strains the small energy difference between the nonpolar ground state and the alternative polar phase yields a robust antiferroelectric ground state. The coexistence of ferroelectricity and antiferroelectricity observed in thin films is attributed to a combination of strain and depolarization field effects. [2,3] in that its structure is obtained through distortion of a nonpolar high-symmetry reference structure; for ferroelectrics the distortion is polar, while for antiferroelectrics it is nonpolar. However, not all nonpolar phases thus obtained are antiferroelectric; in addition, there must be an alternative ferroelectric phase obtained by a polar distortion of the same reference structure, close enough in free energy so that an applied electric field can induce a first-order phase transition from the antiferroelectric to the ferroelectric phase, producing a characteristic polarization-electric field (P-E) double-hysteresis loop. The electric-field-induced transition is the source of functional properties and promising technological applications. Non-linear strain and dielectric responses at the phase switching are useful for transducers and electrooptic applications [4,5]. The shape of the double hysteresis loop suggests applications in high-energy storage capacitors [6,7]. In addition, an effective electro-caloric effect can also be induced in systems with a large entropy change between the two phases [8].Lead zirconate PbZrO 3 (PZO) was the first material identified as antiferroelectric [9]. Despite extensive studies and characterization, PZO continues to offer insights into the origin and complexity of antiferroelectricity [10,11]. In bulk form, PZO has a cubic perovskite structure at high temperatures and a nonpolar orthorhombic ground state below T c ∼ 505 K. The ground state has space group Pbam [12, 13] and unit cell dimensions √ 2a 0 × 2 √ 2a 0 × 2a 0 with respect to the reference lattice constant a 0 . Its distorted perovskite structure is derived from the cubic (C) unit cell through a nonpolar Σ 2 distortion mode of Pb +2 ion displacements in the 110 C direction, combined with oxygen octahedron rotation R − 5 modes around the 110 C axis (a − a − c 0 in Glazer notation). Under an applied electric field, PZO single crystals undergo a first order phase transition into a sequence of polar phases with rhombohedral symmetry [14]. Similar rhombohedral polar phases are observed in the polycrystalline ceramic system Pb(Zr 1−x Ti x )O 3 under small 5-10 % isovalent substitution of zirconium for titanium [15,16]. In thin films, the competition between the rhombohedral low-energy structures and the PZO ground state is less studied. Room temperature ...

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“…[2][3][4][5][6][7][8] Most studied antiferroelectric ceramics in literature are based on the prototype compound PbZrO 3 with a perovskite structure, in which the phase transition manifests itself in the development of a large polarization and is generally accompanied by a significant volume expansion when the applied field exceeds a critical magnitude E F . [2][3][4][5][6][7][8][9][10] The associated volume change at the phase transition has been explored as a mechanism for toughening the ceramic. 11 Recently, it has been reported that some chemically modified PbZrO 3 -based ceramics can exist either in the antiferroelectric or ferroelectric state at room temperature, depending on their thermal history.…”

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Antiferroelectricity induced by electric field in NaNbO3-based lead-free ceramics

Xu¹,

Hong²,

Feng³

et al. 2014

Applied Physics Letters

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Electric fields are known to favor a ferroelectric phase with parallel electric dipoles over an antiferroelectric phase. We demonstrate in this Letter that electric fields can induce an antiferroelectric phase out of a ferroelectric phase in a NaNbO3-based lead-free polycrystalline ceramic. Such an unlikely ferroelectric-to-antiferroelectric phase transition occurs at fields with a reversed polarity and competes with the ferroelectric polarization reversal process.

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The Antiferroelectric ↔ Ferroelectric Phase Transition in Lead‐Containing and Lead‐Free Perovskite Ceramics

Cited by 363 publications

References 175 publications

Giant strain with low cycling degradation in Ta-doped [Bi1/2(Na0.8K0.2)1/2]TiO3 lead-free ceramics

Giant strain with low cycling degradation in Ta-doped [Bi1/2(Na0.8K0.2)1/2]TiO3 lead-free ceramics

Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3from first principles

Antiferroelectricity induced by electric field in NaNbO3-based lead-free ceramics

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