The application of a low energy loss electron detector in conjunction with scanning Auger microscopy: an aid to quantitative surface microscopy

Barkshire, I. R.; Roberts, R. H.; Prutton, M.

doi:10.1016/s0169-4332(97)00225-0

Cited by 9 publications

(6 citation statements)

References 9 publications

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“…These linescans clearly show the oxygen enhancement at the Si/Ti interface, which has a mean atomic number of 20 revealed by the loss linescan. 15 The TiN region shows up in the loss linescan with a mean atomic number of 18. Finally, new features associated with the regions of lower brightness at the contact centres can be seen on the right-hand side of the loss linescan.…”

Section: Resultsmentioning

confidence: 98%

3D characterization of a W/TiN/ Ti/Si contact structure using MULSAM

Roberts

Prutton

Wilkinson

et al. 1998

Surf. Interface Anal.

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Section: Resultsmentioning

confidence: 98%

3D characterization of a W/TiN/ Ti/Si contact structure using MULSAM

Roberts

Prutton

Wilkinson

et al. 1998

Surf. Interface Anal.

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“…(The carbon KLL Auger peak also was considerably reduced.) The loss electron signals (Barkshire et al 1997, Wells 1972 (measured so as to include all electrons having lost < 200 eV in the sample) were recorded in addition to the O(KLL) and Si(LVV) signals during linescanning perpendicular to the stripe.…”

Section: Sio 2 Stripe Embedded In Simentioning

confidence: 99%

Mc3D: A three‐dimensional Monte Carlo system simulating image contrast in surface analytical scanning electron microscopy I—Object‐oriented software design and tests

et al. 1998

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Summary:The main features of a three-dimensional (3-D) Monte Carlo software system (Mc3D), designed for the simulation of electron scattering and image contrast in a scanning electron microscope, are reported. Before simulating electron trajectories in the sample, impingement of the incident electron beam is described by introducing the idea of a virtual scan path in 3-D space. A general and concise algorithm is given for simulating the intersection of electron trajectories leaving the sample onto multidetector entrance apertures distributed in 3-D space. By optimising the object-oriented design in conjunction with the use of a process-oriented and data-oriented code structure, Mc3D is capable of simulating microscopic analysis of a sample with a 3-D geometry or structure that can be expressed with formulae. Three examples of the use of Mc3D are given. The first is for linescans across a block of SiO 2 on top of a Si substrate; the second is for a stripe of SiO 2 embedded in a Si substrate. Finally, the simulation of Auger linescans across an Au overlay on Si is compared with experimental results. The relationships between experimental linescans and the true beam impact positions on the sample are revealed through the virtual scan path. An edge effect, parallel-edge enhancement, is predicted when the incident electron beam size, the distance of impact position to the terrace edge, and the inelastic mean free path of the Auger electron from a given element are comparable, and the linescan is parallel to the terrace edge. All three examples demonstrate the sensitivity of image contrast to the disposition of the sample with respect to the electron column and the detector position.

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“…The assessment of sample contamination effects is often complicated by the fact that LLE detectors employed in high-vacuum FEGSEMs often differ in design from the corresponding detector used in ultra-high-vacuum (UHV) instruments. To reduce complications arising from dissimilar detector characteristics, the present work employed the same LLE detector employed in the earlier study that took place under UHV conditions (Barkshire et al, 1997; Pratt et al, 2007). Using this detector, LLE data were acquired from the pure elemental standards previously used, and additionally the experimental LLE spectra were matched to the results of Monte Carlo simulations.…”

Section: Introductionmentioning

confidence: 99%

Use of Monte Carlo Modeling to Aid Interpretation and Quantification of the Low Energy-Loss Electron Yield at Low Primary Energies

et al. 2008

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Experimental low-loss electron (LLE) yields were measured as a function of loss energy for a range of elemental standards using a high-vacuum scanning electron microscope operating at 5 keV primary beam energy with losses from 0 to 1 keV. The resulting LLE yield curves were compared with Monte Carlo simulations of the LLE yield in the particular beam/sample/detector geometry employed in the experiment to investigate the possibility of modeling the LLE yield for a series of elements. Monte Carlo simulations were performed using both the Joy and Luo [Joy, D.C. & Luo, S., Scanning 11(4), 176988 (2005)] to assess the influence of the more recent stopping power data on the simulation results. Further simulations have been conducted to explore the influence of sample/detector geometry on the LLE signal in the case of layered samples consisting of a thin C overlayer on an elemental substrate. Experimental LLE data were collected from a range of elemental samples coated with a thin C overlayer, and comparisons with Monte Carlo simulations were used to establish the overlayer thickness.

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The application of a low energy loss electron detector in conjunction with scanning Auger microscopy: an aid to quantitative surface microscopy

Cited by 9 publications

References 9 publications

3D characterization of a W/TiN/ Ti/Si contact structure using MULSAM

3D characterization of a W/TiN/ Ti/Si contact structure using MULSAM

Mc3D: A three‐dimensional Monte Carlo system simulating image contrast in surface analytical scanning electron microscopy I—Object‐oriented software design and tests

Use of Monte Carlo Modeling to Aid Interpretation and Quantification of the Low Energy-Loss Electron Yield at Low Primary Energies

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