The application of magnetic self-filter to optimization of AIN film growth process during the impulse plasma deposition synthesis

Abstract

This work presents the very first results of the application of plasma magnetic filtering achieved by a coil coupled with an electrical circuit of a coaxial accelerator during the synthesis of AlN thin films by use of Impulse Plasma Deposition method (IPD). The uniqueness of this technical solution lies in the fact that the filter is not supplied, controlled and synchronized from any external device. Our solution uses the energy from the electrical circuit of plasma accelerator. The plasma state was described on the basis of OES studies. Estimation of the effects of plasma filtering on the film quality was carried out on the basis of characterization of structure morphology (SEM), phase and chemical composition (vibrational spectroscopy). Our work has shown that the use of the developed magnetic self-filter improved the structure of the AlN coatings synthesized under the condition of impulse plasma, especially by the minimization of the tendency to deposit metallic aluminum droplets and columnar growth.

Development of nitride-sensors for monitoring in control systems

“…The research of analyzing the Mn storey-transition free energy by optical measurements in the ultraviolet-visible region reported the strongly localized twist ( = 5/2) that the Mn 3cf electrons could couple with free carriers, resulting in an effective Mn-Mn ferromagnetic interaction, and a duty period in the position of Fermi level with different Mn immersions [13]. According to the Linear Combination of Atomic Orbitals (LCAO) negatron band social structure of this semiconductor, the sum electron spin of the Mn corpuscle relies on the position of the fathometer level and inter-band transition, which are reported in [14].…”