The application of the loop annealing technique to self diffusion studies in silicon

Sanders, I. R.; Dobson, P. S.

doi:10.1007/bf00540547

Cited by 36 publications

(11 citation statements)

References 13 publications

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“…In this case, the activation enthalpy is estimated to be 4.24 eV, including the migration barrier between the H and X sites. At high temperatures, since the Fermi level normally lies in the midgap at any doping level, we believe that diffusing species are in a neutral charge state, with the activation enthalpy of about 4.24 eV, in good agreement with experimental values of 4.1-5.1 eV [8][9][10][11][12][13]. We also find similar activation enthalpies along the T-X-T and T-H-T paths.…”

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confidence: 84%

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First-principles study of the self-interstitial diffusion mechanism in silicon

Lee

Chang

1998

J. Phys.: Condens. Matter

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We study the stability and migration mechanism of self-interstitials in Si through first-principles self-consistent pseudopotential calculations. The neutral Si interstitial is lowest in energy at a [110]-split site, with energy barriers of 0.15-0.18 eV for migrating into hexagonal and tetrahedral interstitial sites, while the migration barrier from a hexagonal site to a tetrahedral site is lower, 0.12 eV. These migration barriers are further reduced through successive changes in the charge state at different sites, which allow for the athermal diffusion of interstitials at very low temperatures. The [110]-split geometry is also the most stable structure for negatively charged states, while positively charged self-interstitials have the lowest energy at tetrahedral sites. Apart from the migration barrier, the formation energy of the [110]-split interstitial is estimated to be about 4.19 eV; thus, the resulting activation enthalpy of about 4.25 eV is in good agreement with high-temperature experimental data.

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confidence: 84%

“…At high temperatures not too far below the melting temperature (T m ∼ 1685 K), experiments [8][9][10][11][12][13] showed that the self-diffusion coefficient follows an Arrhenius relation:…”

mentioning

confidence: 99%

First-principles study of the self-interstitial diffusion mechanism in silicon

Lee

Chang

1998

J. Phys.: Condens. Matter

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“…Equation [3] differs from the assumption of Hu (2) that the generation rate of Si~ was directly proportional to the oxidation rate. Hu's assumption leads to Rgen a t-V2 and stacking fault length atv2.…”

Section: Silicon Self-interstitial Generationmentioning

confidence: 92%

“…Referencing these concentrations to C~ ~ the equilibrium concentration, then (39,40) CI L = exp (AFL/kT) [11] Ci o where AFL is the change in dislocation loop free energy per additional incorporated atom. The silicon interstitial supersaturation, C~/C~ o, can be estimated by integrating Eq.…”

Section: Stacking Fault Retrogrowthmentioning

confidence: 99%

Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An Overview

Fair¹

1981

J. Electrochem. Soc.

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As a result of a large body of literature on oxidation, impurity diffusion, and defect growth in silicon, a consistent picture has emerged of oxidationenhanced diffusion (OED) and oxidation-induced stacking fault growth (OISF). It is believed that silicon self-interstitials can be generated at an oxidizing Si/SiO2 interface as a result of an incomplete half-cell reaction involving silicon and oxygen. Those interstitials that do not participate in surface regrowth participate in raising the steady-state concentration of selfinterstitials in the surface region. OED can be explained in terms of a partial interstitialcy mechanism involving the surface-generated self-interstitials. The growth of OISF will occur if the relative steady-state self-interstitial concentration around the fault exceeds the emitted concentration of interstitiais from the fault line. It is shown that this model predicts that OISF growth is limited by the production rate of self-interstitials at the Si/SiO~ interface. The retrogrowth, of OISF and the reduction of OED both occur when the concentration of generated self-interstitials decreases. The introduction of chlorine-bearing compounds into the oxidation tube can also cause retrogrowth. The reaction of chlorine with silicon at the interface creates vacancies which can recombine with generated self-interstitials and reduce their concentration. Calculations show that the chlorine compound formed at the inter= face is SIC1.Thermal oxidation of silicon is known to promote the growth of stacking faults (1-18) and dislocations (19). The stacking faults may be extrinsic or intrinsic. Extrinsic faults are formed by the insertion of an additional layer of atoms in the atom plane stacking sequence and are the type normally observed in oxidized silicon (6, 8). Stacking fault nuclei lie in the wafer prior to oxidation. Several causes of the nuclei have been observed, including mechanical damage, impurity centers, crystal growth defects, and ion implantation damage. During oxidation the stacking faults grow as two-dimensional structures lying on inclined (111) planes bounded by partial dislocations.Also occurring during oxidation is the enhanced diffusion of dopant impurities in silicon (20-25). The growth of stacking faults and the enhancement of impurity diffusion during oxidation have some similarities:1. Both the growth of oxidation-induced stacking faults (OISF) and oxidation-enhanced diffusion (OED) depend upon crystal orientation of surface planes. The rates of these effects increase in the order of (111), (110), and (100) (7, 20, 23, 26).2. Both phenomena occur more rapidly in steam than in dry oxygen (5,9,23). This correlates with the higher oxidation rate in steam.3. Both phenomena are the consequences of a longrange process. The density of bulk OISF decreases with increasing depth from the Si/SiO2 interface (27). The effect of OED has been observed to reach ~10 ~m below the interface (23).4. Both OED and OISF phenomena are suppressed in the presence of HC1 gas during oxidation (28).5. Mechanic...

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“…The reason is mainly the presence of the term fA/fs. Accepting the Sanders and Dobson data (31), as representative of lower temperatures (5), and =o = 3.85 X 10 -s cm, we obtain the following relationship from Eq. [8] and the calculated values of YA/}'s from Eq.…”

Section: F~ ~~Jdo~cs Ir [8]mentioning

confidence: 99%

Boron in Near‐Intrinsic <100> and <111> Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation

Antoniadis

Gonzalez

Dutton

1978

J. Electrochem. Soc.

151

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The diffusivity of boron in <100> and <111> silicon is experimentally determined under both inert and oxidizing (dry 02) ambient conditions in the range of temperatures 850~176The boron is implanted at moderate dose (1.3 X 1014 cm -2) and energy (70 keV) and subsequently activated by a moderate temperature anneal. The resulting profile ensures near-intrinsic silicon at the processing temperatures and serves as initial condition for subsequent processing. Diffusivities and segregation coefficients are calculated as fitting parameters in numerical solution of the experiments. A systematic fitting procedure is used and the target experimental parameters are sheet resistances and junction depths. Inert ambient diffusivities agree well with previous measurements, thus demonstrating the integrity of newly published mobility data used in the simulations. Diffusivities in oxidizing ambient are enhanced, more so in <100> than in <111> silicon. The enhancement increases with decreasing temperature, being about 10 for <100> at 850~ It is demonstrated that there is good agreement between the observed diffusivity enhancement and growth of oxidation stacking faults if an interstitialcy mechanism is invoked to explain both phenomena. Observed segregation coefficients are different for the two silicon orientations but they obey the same activation energy over the temperature range.

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The application of the loop annealing technique to self diffusion studies in silicon

Cited by 36 publications

References 13 publications

First-principles study of the self-interstitial diffusion mechanism in silicon

First-principles study of the self-interstitial diffusion mechanism in silicon

Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An Overview

Boron in Near‐Intrinsic <100> and <111> Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation

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