The band structure and the double metal-insulator-metal phase transition in the conductivity of elastically strained zero-gap Cd x Hg1−x Te

Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe

“…11, that the limit case e g (P) > E 0 /4 (when material becomes a direct gap one) for the range of strains (3-4)×10 8 Pa that can be obtained expe− rimentally, can be realized for the comparatively small val− ues of |e g | < 10-20 meV, i.e., for x close to the critical value x = 0.16.…”

“…In order to explain these results, the detailed form of carrier spectra near the band edges was obtained [2,3,11].…”