The Band-Structure Parameters of Bi1 –xSbx (0 ≤ x ≤ 0.15) Thin Films on Substrates with Different Thermal-Expansion Coefficients

Suslov, A. V.; Грабов, В. М.; Комаров, В. А.; Демидов, Е. В.; Сенкевич, С. В.; Suslov, M. V.

doi:10.1134/s1063782619050269

Cited by 12 publications

(7 citation statements)

References 4 publications

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“…Each measurement was repeated three times to confirm the accuracy of the results obtained. The differences in the behavior of the curves in Figure 6 for solid solutions with different concentrations of antimony are associated with differences in the band structure of the material [20]. For Bi 97 Sb 3 film on mica substrate, an overlap of the valence and conduction bands is observed in the material at a room temperature, while a gap is observed in the case of a higher antimony concentration (Bi 92 Sb 8 and Bi 88 Sb 12 ).…”

Section: Resultsmentioning

confidence: 96%

“…The dependence of complex permittivity of a thin film on Sb content is nonlinear: plasma frequency and damping rate may not change in the same way, as well as the effective mass of charge carriers and their mobility. This behavior is due to the strong dependence of the band structure of the material on Sb content [20]. With rising percentage of Sb, the absorption coefficient tends to decrease, while the refractive index first decreases and then increases (has a minimum at 8% Sb).…”

Section: Optical Properties Of Bi 1−x Sb X Filmsmentioning

confidence: 99%

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Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

et al. 2021

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The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

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Section: Resultsmentioning

confidence: 96%

Section: Optical Properties Of Bi 1−x Sb X Filmsmentioning

confidence: 99%

Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

et al. 2021

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“…The resistivity, Hall coefficient and magnetoresistivity were measured experimentally and correspond to elements of tensors in trigonal plane. In case when a vector of magnetic induction is normal to plane (B n) and direct current is flowing through the film plane, the measured components match with ρ 11 , R 12,3 , ρ 11,33 . This approximation can be used for single-crystal and block films as anisotropy for carriers in plane is minimal either for crystals: ρ 11 ≈ ρ 22 .…”

Section: Dual-zone Model Of Bismuth-antimonymentioning

confidence: 82%

“…It seems that dependency of Hall coefficient on Sb content is rather complex, and such behavior is due to variation of Bi 1−x Sb x band structure. The first calculation of thin-film bismuth-antimony band structure was performed in work of Suslov et al for different film thicknesses using dual-zone model [11].…”

Section: Resistivity Magnetoresistivity and Hall Coefficientmentioning

confidence: 99%

“…They have also extracted the carrier density assuming that effective carrier mass (measured for bulk crystal at the helium temperature, but applied for thin film at the room temperature) depends on neither film thickness nor antimony concentration. However, the film thickness, temperature and a substrate material strongly affect this parameter [10,11]. To obtain the correct values of the mentioned parameters, it is necessary to use a dielectric substrate which has low losses in the THz frequency range.…”

Section: Introductionmentioning

confidence: 99%

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Optical and Galvanomagnetic Properties of Bi1-xSbx Thin Films in the Terahertz Frequency Range

et al. 2020

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We report results of galvanomagnetic and terahertz time-domain spectroscopy measurements on thin films of Bi 1−x Sb x on polyimide and mica substrates with various antimony concentrations (x from 0 to 15 %) and film thickness (70, 150 nm). The resistivity, Hall coefficient and magnetoresistivity of the films were measured experimentally in the magnetic field of 0.65 T at room temperature. Mobility and concentration of electrons and holes in the film plane were calculated using the transport coefficients. The terahertz time-domain spectroscopy is used to measure the complex conductivity and permittivity of Bi 1−x Sb x thin films on the dielectric substrates in the frequency range from 0.2 to 1 THz. The plasma frequency, relaxation time, DC conductivity and effective carrier mass were extracted from these data and evaluated as functions of the Sb concentration for different film thickness and substrate. We observed that the film magnetoresistivity decreases with increasing the Sb concentration and for most of the films the Hall coefficient is negative and depends on the external factors insignificantly. We show that the mobility of charge carriers weakly depends on Sb concentration, which confirms the assertion about the scattering of carriers on themselves and not on defects in the structure. It was revealed that film static and dynamic resistivity (conductivity) as well as dielectric permittivity depend on Sb content and the film thickness. The results may be used for development of various thermoelectric, electronic and optical devices, such as THz detectors or components which can control the properties of THz radiation.

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Changes in the Crystal Lattice Parameters of Bismuth Films on Substrates with Different Thermal Expansion

Suslov,

Gerega,

Rodionov

et al. 2024

Cryst. Res. Technol.

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Due to the sensitivity of the electronic structure of semi‐metals to small distortions of the crystal lattice, the study of the electrical and galvanomagnetic properties of bismuth films requires taking into account the deformation that occurs in the film‐substrate system due to the difference in the thermal expansion of the film and substrate materials. The magnitude of these deformations plays an important role in analyzing the temperature dependencies of the transport properties of charge carriers. The paper presents an experimental study of the magnitude of deformation of bismuth films on various substrates at 300 and 77 K using X‐ray diffraction. Changes in the lattice constant of crystallites, the trigonal axis of which is perpendicular to the film plane, depending on the substrate material, are obtained. A comparison between the assessment of the deformation of these crystallites in the film plane based on Hooke's law and the difference in the coefficients thermal expansion of the film and substrate materials is made.

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The Band-Structure Parameters of Bi1 –xSbx (0 ≤ x ≤ 0.15) Thin Films on Substrates with Different Thermal-Expansion Coefficients

Cited by 12 publications

References 4 publications

Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Optical and Galvanomagnetic Properties of Bi1-xSbx Thin Films in the Terahertz Frequency Range

Changes in the Crystal Lattice Parameters of Bismuth Films on Substrates with Different Thermal Expansion

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