2022
DOI: 10.3390/ma15175895
|View full text |Cite
|
Sign up to set email alerts
|

The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

Abstract: In this work, the electrical parameters of the polycrystalline diamonds’ p-PCD/n-Si heterojunction were investigated using temperature-dependent current–voltage (I-V) characteristics. In the temperature range of 80–280 K, the ideality factor (n) and energy barrier height (φb) were found to be strongly temperature dependent. The φb increases with temperature rise, while the n value decreases. The observed dependencies are due to imperfections at the interface region of a heterojunction and the non-homogeneous d… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 38 publications
0
0
0
Order By: Relevance