The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier

Abstract

Articles you may be interested inRole of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metalinsulator-semiconductor structures under forward gate bias stress Appl. Phys. Lett. 105, 033512 (2014); 10.1063/1.4891532 Extremely large magnetoresistance induced by optical irradiation in the Fe/SiO2/p-Si hybrid structure with Schottky barrier Electrical properties of metal-insulator-semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance J. Vac. Sci. Technol. A 15, 3143 (1997); 10.1116/1.580859Metal-insulator-semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer J.We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO 2 /n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10-30 K in the frequency range of 10 Hz-1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO 2 /n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics. V C 2014 AIP Publishing LLC. [http://dx.

Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure

“…In the dc mode, the MR effect is weak even in high magnetic fields of up to 9 T. 17 For this reason, we started studying the Schottky diodes with the Mn electrode with impedance (Z = R ac + iX, where R ac and X are the real and imaginary parts of the impedance, respectively) and magnetoimpedance measurements. At reverse and low forward bias V b (V b < V c b ≈ 2 V), we obtained the results similar to those reported in 18,20 for the structures with Fe.…”

“…The reverse bias affects the peak position in the R ac (T ) dependence and, thus, allows the MR ac value to be controlled within a certain range, especially in the low-frequency region, as was observed, e.g., in Ref. 20 for the Fe/SiO 2 /n-Si structure. At V b <V c b , the forward bias does not noticeably affect the R ac (T ) curve.…”

“…Our studies on lateral devices and Schottky diodes based on the Fe/SiO 2 /p(n)-Si hybrid structures showed that the interface states localized in the SiO 2 /p(n)-Si interfacial region make a significant contribution to magnetotransport. [17][18][19][20] These states are involved in recharging and their energy structure is rearranged by a magnetic field. However, this is apparently not the only possible mechanism, since it does not explain the variety of MR effects observed in the MIS-structure-based devices.…”

Approach to form planar structures based on epitaxial Fe1−xSix films grown on Si(111)

“…Control of the etching process was performed using atomic force microscopy (AFM) and magneto-optical Kerr effect (MOKE) microscopy with the help of NanoMOKE 2 installation. Test transport properties measurements of Fe0.75Si0.25 film and Fe0.75Si0.25-based planar structure were performed at cryogenic probe station Lakeshore EMPX-HF 2 and home built facility [21] equipped with a helium cryostat and KEITHLEY-2634 current/voltage source meter in the temperature range from 4.2 K to 300 K.…”

Temperature-induced variation of magnetoresistance and tunneling current in La2/3Sr1/3MnO3/LaMnO3 (ZrO2)/La2/3Sr1/3MnO3 junctions

“…LSMO also exhibits nearly 100% spin polarized electronic transport which will give a bright future in the applications [14][15][16][17][18]. One important aspect is the magnetic tunnel junctions (MTJs), which consists of two normal FM metallic electrodes separated by a thin insulator barrier such as LMO and ZrO 2 [19][20][21][22][23][24]. The tunneling magnetoresistance (TMR) is usually defined via the difference in resistances between the antiparallel and parallel arrangements of the electrodes' magnetic moments.…”