The BTeV pixel detector system

Artuso, M.

doi:10.1016/s0168-9002(02)02022-3

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2003

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“…It is designed to cover the "forward" regions of the proton-antiproton interaction point running at a luminosity of 2·10 32 cm −2 s −1 . The experiment will employ a silicon pixel vertex detector [5] to provide high precision space points for an online lowest-level trigger based on track impact parameters [6]. The "hottest" chips, located at 6 mm from the beam, will experience a fluence of about 10 14 cm −2 y −1 .…”

Section: Introductionmentioning

confidence: 99%

Single event effects in the pixel readout chip for BTeV

Chiodini¹,

Appel²,

Cardoso³

et al. 2003

Nuclear Instruments and Methods in Physics Research Section A:

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In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 µm CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.

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Section: Introductionmentioning

confidence: 99%