The calculation of thin film parameters from spectroscopic ellipsometry data

Jellison, G. E.

doi:10.1016/s0040-6090(96)09009-8

Cited by 80 publications

(29 citation statements)

References 30 publications

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“…The interpretation of these measurements is performed by fitting the calculated ellipsometric responses tan and cos  of an optical model to the experimental data. 6,7 The quality of the simulation is evaluated by minimizing the least-squares deviation between the measured and the calculated spectra by means of a non-linear least-squares regression procedure. 6 The optical model used to simulate the measured data consists of a stratified structure with sharp and parallel interfaces.…”

Section: Resultsmentioning

confidence: 99%

Use of optical methods to characterize thin silane films coated on aluminium

Franquet

Terryn

Bertrand

et al. 2002

Surface & Interface Analysis

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For corrosion and adhesion problems, the aluminium and its alloys are usually modified by different surface treatments. Silane coupling agents that are an alternative treatment for the chromate-containing pretreatment are being used more frequently in industry. This paper focuses on the study of a no-rinse system using the non-functional silane bis-1,2-(triethoxysilyl)ethane (BTSE). The objective of this work is to study the effect of curing BTSE films coated on aluminium substrates. Spectroscopic ellipsometry is used to determine the thickness and optical constants of the silane coatings as a function of the curing conditions. It is shown by infrared spectroscopic ellipsometry (IRSE) how the curing causes changes in the chemistry of silane films deposited on aluminium. Indeed, IRSE combines the advantages of the traditional Fourier transform infrared spectroscopy method (molecular information via knowledge of the infrared absorption bands) with those of spectroscopic ellipsometry (morphological information such as film thickness and optical information such as refractive index and extinction coefficient).

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Section: Resultsmentioning

confidence: 99%

Use of optical methods to characterize thin silane films coated on aluminium

Franquet

Terryn

Bertrand

et al. 2002

Surface & Interface Analysis

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“…It utilizes the rotating compensator technology with two multichannel detection systems. This setup enables the measurement of both ellipsometric angles ( and , the amplitude ratio and phase difference, respectively, of the complex reflection coefficients of light polarized parallel and perpendicular to the plane of incidence [25,26]) with an accuracy of 5×10 -2 in the wavelength range from 191 to 1690 nm (6.49 -0.73 eV), with a spectral resolution of about 1.5 nm in the lower (short wavelength) part and about 3.5 nm in the upper part of the spectrum, totaling in 706 wavelength points. The angles of incidence of the illumination were chosen to be between 65° and 75°, in order to be close to the Brewster angle of Si for some wavelengths within the spectral range.…”

Section: Se Measurement Setupmentioning

confidence: 99%

“…X are either N = cos(2Ψ), C = sin(2Ψ)cos(Δ) or S = sin(2Ψ)sin(Δ), when assuming isotropic samples for M-2000DI evaluations or α = -cos(2Ψ) or β = sin(2Ψ)cos(Δ) for the IRSE evaluations. These values are linearly related to the measured intensity harmonics modulated by either a rotating compensator (for N, C and S) or a rotating analyzer (for α and β) [25,26], (Handbook of Ellipsometry, pp. 523-534 [27]).…”

Section: Se Measurement Setupmentioning

confidence: 99%

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Fodor

Agócs

Bardet

et al. 2016

Microporous and Mesoporous Materials

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+3620 361 7876This paper suggests the evaluation of morphological parameters of porous silicon layers (PSL) using spectroscopic ellipsometry from UV to midinfrared optical range. PSL were prepared by electrochemical etching of monocrystalline silicon wafers in hydrofluoric acid-based electrolyte. Measuring with an optical and an infrared ellipsometer with a wide spectral range permits an accurate characterization of PSL properties from the top surface to the bottom of the layer with thicknesses from several hundred nanometers up to a few tens of micrometers. Several different optical models for ellipsometric evaluations were developed to determine the thickness, the average porosity, the in-depth porosity gradient, the oxidation level and the surface roughness of the PSL. Porosity was modeled with multiple effective medium layers by varying ratio of crystalline silicon, void and oxidized silicon wherever needed. Thin PSL (< 5 μm) shows no impact of current density on porosity and thickness. However, evaluation of thick PSL (20 -50 μm) highlights the in-depth porosity gradient. Thickness values were also cross-checked with electron microscopy confirming the proposed ellipsometric models. Additionally, different oxidation techniques have also been compared in terms of oxidation level and void content. Volume expansion during PSL oxidation follows exactly the same behavior as that during the oxidation of planar silicon wafers.

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“…Bragg reflectivity measurements were carried out by means of Spectroscopic Ellipsometry (SE) [29,30]. Spectroscopic ellipsometric data were acquired by a Jobin Yvon UVISEL-NIR phase-modulated spectroscopic ellipsometer apparatus, at 70…”

Section: Bragg Mirror Reflectivity Characterizationmentioning

confidence: 99%

Microcavity Silicon Photodetectors at 1.55 μm

Casalino

Coppola

Gioffrè

et al. 2011

Advances in OptoElectronics

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The design, the realization, and the characterization of silicon resonant cavity enhanced (RCE) photodetectors, working at 1.55 μm, are reported. The photodetectors are constituted by a Fabry-Perot microcavity incorporating a Schottky diode. The working principle is based on the internal photoemission effect. We investigated two types of structures: top and back-illuminated. Concerning the top-illuminated photodetectors, a theoretical and numerical analysis has been provided and the device quantum efficiency has been calculated. Moreover, a comparison among three different photodetectors, having as Schottky metal: gold, silver, or copper, was proposed. Concerning the back-illuminated devices, two kinds of Cu/p-Si RCE photodetectors, having various bottom-mirror reflectivities, were realized and characterized. Device performances in terms of responsivity, free spectral range, and finesse were theoretically and experimentally calculated in order to prove an enhancement in efficiency due to the cavity effect. The back-illuminated device fabrication process is completely compatible with the standard silicon technology.

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The calculation of thin film parameters from spectroscopic ellipsometry data

Cited by 80 publications

References 30 publications

Use of optical methods to characterize thin silane films coated on aluminium

Use of optical methods to characterize thin silane films coated on aluminium

Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

Microcavity Silicon Photodetectors at 1.55 μm

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