The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities

Abstract

Nano-crystalline Si films with high conductivities are highly desired in order to develop the new generation of nano-devices. Here, we first demonstrate that the grain boundaries played an important role in the carrier transport process in un-doped nano-crystalline Si films as revealed by the temperature-dependent Hall measurements. The potential barrier height can be well estimated from the experimental results, which is in good agreement with the proposed model. Then, by introducing P and B doping, it is found that the scattering of grain boundaries can be significantly suppressed and the Hall mobility is monotonously decreased with the temperature both in P- and B-doped nano-crystalline Si films, which can be attributed to the trapping of P and B dopants in the grain boundary regions to reduce the barriers. Consequently, a room temperature conductivity as high as 1.58 × 103 S/cm and 4 × 102 S/cm is achieved for the P-doped and B-doped samples, respectively.

The Effect of Decomposed PbI2 on Microscopic Mechanisms of Scattering in CH3NH3PbI3 Films

“…3 Hall mobilities of all the MAPbI 3 films at room temperature accordingly [42]. Consequently, it is indicated that a GB scattering governs the charge transport process [43]. Seto et al established the theoretical model to describe the GB scattering process and Hall mobility μ 0 shows the thermally activated behavior as below:…”

Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

“…In order to prove that impurities located in Si-NCs effectively act as dopant, it is necessary to assess their electrical activity. This can be done using, for instance, conductivity and resistivity data [40,133,134,207], current density versus electric field measurements [40,200,208,212,224], Hall mobility experiments [225] and field effect transistor analysis [136].…”

“…In order to prove that impurities located in Si-NCs effectively act as dopant, it is necessary to assess their electrical activity. This can be done using, for instance, conductivity and resistivity data [40,133,134,207], current density versus electric field measurements [40,200,208,212,224], Hall mobility experiments [225] and field effect transistor analysis [136]. Due to the difficulties in the interpretation of the results obtained in transport measurements, that often depend on a large number of concomitant effects (like for instance transport due to defects, the presence of hyperdoping effects and transport in percolated nano-Si networks), today little is known about the effective electronic activation.…”

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

“…The doped sample shows a peak at approximately 129 eV. According to the literature, the binding energy of the P-O bond and the P-Si bond is 134.5 and 128.4 eV, respectively [ 29 ], thus it is judged that the peak corresponds to P-Si bond. The appearance of the P-Si signal proves that phosphorus doping is achieved successfully by the spin-on-dopant method.…”