The characteristics of GaN-based blue LED on Si substrate

Pulsed laser deposition of hexagonal GaN-on-Si(100) template for MOCVD applications

“…The d-spacing of GaN-1 in the [0001] and [10,10] directions were 0.518 and 0.280 nm respectively. Similarly, for GaN-2, a d-spacing of 0.259 and 0.161 nm along the [0002] and [11][12][13][14][15][16][17][18][19][20] directions was verified. The values of the d-spacing are close to the lattice constant of h-GaN.…”

“…A similar approach has been carried out with GaN-on-Si [14]. Generally, GaN is grown on Si(111) substrates due to the three-fold symmetry of this plane, which is a good match to the hexagonal GaN crystallite.…”

Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate

“…4, with the increase of forward current, the forward voltage of the vertical LEDs appears a downtrend. In order to explain this, we have investigated the I-V-L of the vertical LEDs before and after epoxy-package (the data are not shown here) [16] . There is no downtrend before full cut dicing and package, the light-output shows no saturation up to 1000 mA.…”

“…This further illuminates that the series resistance of vertical LEDs is smaller than that of the lateral LEDs, see ref. [16] for details.…”

The growth of III–V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

“…Furthermore, growing p-type GaN-based materials are much easier than MOCVD as it requires no postgrowth heat treatment for the activation of Mg dopant in the p-type GaN-based materials due to the hydrogen free environment. Conversely, growing p-type GaN-based materials using MOCVD requires post-treatment due to the generation of hydrogen species as by-products from the precursor [1][2][3][4][5][6][7][8].…”