The Charge Carrier Transport Mechanisms in the Diffusion n–p Junctions Based on MBE CdxHg1—xTe

The influence of dislocations on the parameters of diodes fabricated on p-type Cd 0.22 Hg 0.78 Te layers grown by molecular beam epitaxy (MBE) has been investigated. The n-region of diodes was formed by mercury thermodiffusion from anodic oxide. To introduce dislocations some diodes from the array were subjected to a pressure of (1-6) Â 10 7 N/m 2 . It was found that after applying a pressure of more than 4 Â 10 7 N/m 2 the diode parameters degraded due to an increasing trap concentration with energies E t1 % E v + 0.035 eV and E t2 % E v + 0.043 eV. It is suggested that these traps are connected with dislocations.

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Influence of Dislocations on MBE Cd0.22Hg0.78Te/GaAs Photodiodes

Romashko

Клименко

Ovsyuk

et al. 2001

phys. stat. sol. (a)

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The Charge Carrier Transport Mechanisms in the Diffusion n–p Junctions Based on MBE CdxHg1—xTe

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Influence of Dislocations on MBE Cd0.22Hg0.78Te/GaAs Photodiodes

Influence of Dislocations on MBE Cd0.22Hg0.78Te/GaAs Photodiodes

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