The Chemical and Isoconcentration Diffusion of Zn in AlSb

Abstract

The chemical diffusion of Zn in AlSb has been investigated as a function of temperature in the range 650 to 933 "C and as a function of Zn surface concentration. The diffusion coefficient is found to be concentration-dependent and shows a behaviour similar to that observed in GaAs, Gap, and InP. Isoconcentration diffusion of Zn a t 933 "C in AlSb is found to be strongly concentration-dependent. Quenching of Zn-diffused samples shows that the substitutional Zn is a single-level acceptor which is completely ionized a t the diffusion temperature. It is concluded that the Longini model provides a satisfactory interpretation of the diffusion processes. Substitutional Zn in AlSb is also found to show retrograde solubility.Die chemische Diffusion von Zn in AlSb wurde als Funktion der Temperatur im Bereich 650 bis 933 O C und der Oberfllichenkonzentration von Zn untersucht. Es wird gefunden, daS der Diffusionskoeffizient konzentrationsabhangig ist und ein Verhalten zeigt, das dem fur GaAs, GaP und I n P beobachteten ahnlich ist. Isokonzentrationsdiffusion von Zn bei 933 O C in AlSb ist stark konzentrationsabhangig. Tempern von Proben mit Zn-Diffusion zeigt, daD Zn auf Gitterplatz ein einfacher Akzeptor ist, der bei der Diffusionstemperatur vollstandig ionisiert ist. Es wird angenommen, daS das Model1 von Longini die Diffusionsprozesse befriedigend beschreiben kann. Fur Zn auf Gitterplatz in AlSb wird ebenfalls eine riicklaufige Loslichkeit gefunden.

Mechanisms of atomic diffusion in the III-V semiconductors

“…Once again, anomalous profiles were obtained and it seems likely that the diffusion mechanism is similar to that of Zn in GaAs. Investigations giving broadly similar results have been carried out for InSb (Kendall 1968, Mozzi andLavine 1970), InAs (Boltaks andRembezza 1967, Mozzhorin andStafeev 1967), GaSb (Da Cunha and Bougnot 1974) and AlSb (Showan and Shaw 1969). There are very few reliable studies on the 111-V solid solutions.…”

Accurate Determination of Shallow Zn‐Diffusion Profiles in GaP and GaAs0.1 P 0.9 Using Anodic Oxidation and a Double Radioactive Tracer Technique

“…The H20 generated by reaction [1] also reacts with B20~ to form HBO2 which subsequently reacts with Si to form elemental boron and SiO2 (1)…”

“…The intent here is to study this system in more detail. In this diffusion system, CO2 oxidizes BaH6 to produce B208 analogous to reaction [1] BfH6 + 6CO2 -> ]3203 --}-6CO ~-8H20 [6] The diffusion of boron then proceeds according to reactions [2], [3], and [4].…”

A comparative study of zinc tracer diffusion profiles in LEC, SSD, and CVD GaP

“…But such tails were seldom measured in semiconductors; a good example is the system CVD Si:As [2]. Concerning 111-V compounds, the tails appearing sometimes in C ( x ) were discussed as "short-circuit diffusion paths" up to now only on the systems AlSb : Zn and AlSb : Cd [3]. With respect to the practically very important Gap: Zn system corresponding investigations are wanting.…”